High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1687-1691 ◽  
Author(s):  
Clément Fleury ◽  
Mattia Capriotti ◽  
Matteo Rigato ◽  
Oliver Hilt ◽  
Joachim Würfl ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrates ◽  
Gan Hemts

High temperature performance of AlGaN/GaN HEMTs on Si substrates

2006 ◽  
Vol 50 (3) ◽  
pp. 511-513 ◽  
Author(s):  
W.S. Tan ◽  
M.J. Uren ◽  
P.W. Fry ◽  
P.A. Houston ◽  
R.S. Balmer ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrates ◽  
Temperature Performance ◽  
Gan Hemts

scholarly journals Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals

2011 ◽  
Vol 6 (1) ◽  
pp. 151 ◽  
Author(s):  
Alla Klimovskaya ◽  
Andrey Sarikov ◽  
Yury Pedchenko ◽  
Andrey Voroshchenko ◽  
Oksana Lytvyn ◽  
...  
Keyword(s):  
High Temperature ◽  
Formation Processes ◽  
Si Substrates

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

2022 ◽  
pp. 1-5
Author(s):  
Yajie Xin ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Xiaochuan Deng ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Channel ◽  
Channel Power ◽  
Gan Hemts

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

2020 ◽  
Vol 41 (10) ◽  
pp. 1480-1483
Author(s):  
Arijit Bose ◽  
Debaleen Biswas ◽  
Shigeomi Hishiki ◽  
Sumito Ouchi ◽  
Koichi Kitahara ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gan Hemts

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1667-1671 ◽  
Author(s):  
M. Dammann ◽  
M. Baeumler ◽  
P. Brückner ◽  
W. Bronner ◽  
S. Maroldt ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Stress Test ◽  
High Temperature Stress ◽  
Gan Hemts

scholarly journals High-temperature differences in plasmonic broadband absorber on PET and Si substrates

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jin Hee Kim ◽  
Sung-Gyu Lee ◽  
Teun-Teun Kim ◽  
Taewoo Ha ◽  
Sang Hyup Lee ◽  
...  
Keyword(s):  
High Temperature ◽  
Broadband Absorber ◽  
Si Substrates

Tensile crack patterns in Mo/Si multilayers on Si substrates under high-temperature bending

2004 ◽  
Vol 78 (3) ◽  
pp. 303-305 ◽  
Author(s):  
D.C. Meyer ◽  
T. Leisegang ◽  
A.A. Levin ◽  
P. Paufler ◽  
A.A. Volinsky
Keyword(s):  
High Temperature ◽  
Tensile Crack ◽  
Crack Patterns ◽  
Si Substrates
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