Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing

2016 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Christopher Bower ◽  
Salvatore Bonafede ◽  
Alin Fecioru ◽  
...  
Keyword(s):  
Transfer Printing ◽  
Gan Hemts ◽  
Silicon Cmos

Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si-CMOS by Micro-Transfer-Printing

2017 ◽  
Vol 215 (8) ◽  
pp. 1700556 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Frank Fischer ◽  
Alin Fecioru ◽  
António Jośe Trindade ◽  
...  
Keyword(s):  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Gan Hemts

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

2016 ◽  
Vol 213 (4) ◽  
pp. 917-924 ◽  
Author(s):  
Rémi Comyn ◽  
Yvon Cordier ◽  
Sébastien Chenot ◽  
Abdelatif Jaouad ◽  
Hassan Maher ◽  
...  
Keyword(s):  
Building Blocks ◽  
Monolithic Integration ◽  
Gan Hemts ◽  
Silicon Cmos

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

2020 ◽  
Author(s):  
Brian P. Downey ◽  
Andy Xie ◽  
Shawn Mack ◽  
D. Scott Katzer ◽  
James G. Champlain ◽  
...  
Keyword(s):  
Circuit Design ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Gan Hemts ◽  
Rf Circuit Design ◽  
Rf Circuit

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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