Novel MTO-design based on silicon-silicon bonding

2003 ◽  
Author(s):  
D. Detjen ◽  
S. Schroder ◽  
T. Plum ◽  
R.W. De Doncker
Keyword(s):  
Silicon Silicon

Mechanical behaviour of silicon-silicon carbide composites

1996 ◽  
Vol 16 (7) ◽  
pp. 703-712 ◽  
Author(s):  
E. Scafè ◽  
G. Giunta ◽  
L. Fabbri ◽  
L. Di Rese ◽  
G. De Portu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mechanical Behaviour ◽  
Silicon Silicon

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

Cleavage Reactions of the Silicon-Silicon Bond of Hexaphenyldisilane

1966 ◽  
Vol 31 (9) ◽  
pp. 3047-3048 ◽  
Author(s):  
Tsu Tzu Tsai ◽  
W. L. Lehn ◽  
C. J. Marshall
Keyword(s):  
Cleavage Reactions ◽  
Silicon Silicon

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon
Sign in / Sign up

Export Citation Format

Share Document