Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Diffusion and Defect Structure in Nitrogen Implanted Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Omer Dokumaci ◽  
Richard Kaplan ◽  
Mukesh Khare ◽  
Paul Ronsheim ◽  
Jay Burnham ◽  
...  
Keyword(s):  
Defect Structure ◽  
Silicon Oxide ◽  
Stacking Faults ◽  
Nitrogen Atmosphere ◽  
High Dose ◽  
Finite Capacity ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Thermal Budget

ABSTRACTNitrogen diffusion and defect structure were investigated after medium to high dose nitrogen implantation and anneal. 11 keV N2+ was implanted into silicon at doses ranging from 2×1014 to 2×1015 cm−2. The samples were annealed with an RTA system from 750°C to 900°C in a nitrogen atmosphere or at 1000°C in an oxidizing ambient. Nitrogen profiles were obtained by SIMS, and cross-section TEM was done on selected samples. TOF-SIMS was carried out in the oxidized samples. For lower doses, most of the nitrogen diffuses out of silicon into the silicon/oxide interface as expected. For the highest dose, a significant portion of the nitrogen still remains in silicon even after the highest thermal budget. This is attributed to the finite capacity of the silicon/oxide interface to trap nitrogen. When the interface gets saturated by nitrogen atoms, nitrogen in silicon can not escape into the interface. Implant doses above 7×1014 create continuous amorphous layers from the surface. For the 2×1015 case, there is residual amorphous silicon at the surface even after a 750°C 2 min anneal. After the 900°C 2 min anneal, the silicon fully recrystallizes leaving behind stacking faults at the surface and residual end of range damage.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon

Diffusion of Implanted Nitrogen in Silicon at High Doses

2001 ◽  
Vol 669 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Lance Robertson ◽  
Mark E. Law ◽  
Kevin Jones ◽  
Kevin Gable ◽  
...  
Keyword(s):  
Amorphous Layer ◽  
Type I ◽  
Extended Defects ◽  
Type Ii ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Diffusion Behavior ◽  
System On A Chip ◽  
High Doses ◽  
Type V

ABSTRACTNitrogen implantation is used to retard gate oxide growth thereby making it particularly usefulfor dual- VT and System On A chip technologies. This paper discusses the diffusion behavior and the concomitant defect evolution at high doses of implanted nitrogen in silicon. This paper shows that as the nitrogen implant dose is increased, the extent of nitrogen diffusion reduces. This paper also reports based onTEM studies, that upon annealing at 750°C, 5 × 10014 N2+/cm2, 40 keV implant produces Type I extended defects. However, 2 × 1015 N2+/cm2, 40 keV implant, produces a continuous amorphous layer to a depth ofabout 800 to 900 Å from the surface. In addition, upon annealing at 750°C, the 2 × 1015 N2+/cm2, 40 keV implant produces Type V or solid solubility defects in addition to End of Range or Type II defects.

A SIMS-TEM study of fluorine implants and anneals into silicon and polysilicon

1991 ◽  
Vol 49 ◽  
pp. 808-809
Author(s):  
Vidya S. Kaushik ◽  
Robert L. Hance ◽  
Hsing-H. Tseng ◽  
Philip J. Tobin
Keyword(s):  
Room Temperature ◽  
Gate Oxide ◽  
Wafer Surface ◽  
Boron Diffusion ◽  
Oxide Interface ◽  
Silicon Dioxide Layer ◽  
Diffusion Behavior ◽  
Polysilicon Layer ◽  
Sims Analysis ◽  
Implanted Devices

The behavior of fluorine in silicon is important for VLSI applications. The presence of fluorine can lead to improved gate oxide interface reliability and to enhanced boron diffusion in BF2 implanted devices. We have therefore studied the diffusion behavior of fluorine in silicon and polysilicon using coupled SIMS and TEM investigations on samples implanted with fluorine alone.Fluorine was implanted into a) (100) silicon and b) polysilicon layers to a dose of 1 x 1016/cm2 at 60 keV at room temperature. The polysilicon layers were grown by LPCVD at 635°C, resulting in small grained columnar polysilicon. The polysilicon layers had a 50 nm grown oxide layer between the polysilicon layer and the (100) silicon substrate. After the fluorine implants, the wafers were subjected to annealing at 750-950°C for 30 minutes. All the wafers were capped with a 13 nm silicon dioxide layer at the wafer surface prior to the ion implantation. SIMS analysis was performed on a Cameca IMS-3F spectrometer with 10 keV O2+ ions. XTEM images were obtained on a JEOL 2000 FXII operated at 200 keV with the electron beam parallel to the <110> silicon zone axis.

scholarly journals Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

1996 ◽  
Vol 352-354 ◽  
pp. 1033-1037 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.A. Fedyanin ◽  
E.D. Mishina ◽  
A.N. Rubtsov ◽  
C.W. van Hasselt ◽  
...  
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Silicon Oxide ◽  
Second Harmonic ◽  
Oxide Interface ◽  
Dc Electric Field ◽  
Mos Structures ◽  
Silicon Silicon

Contamination Control of Polysilicon Gates in a Vertical Reactor Cluster Tool

1993 ◽  
Vol 36 (3) ◽  
pp. 33-36
Author(s):  
C. Werkhoven ◽  
E. Granneman ◽  
E. Lindow ◽  
R. de Blank ◽  
S. Verhavcrbeke ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Native Oxide ◽  
Oxide Interface ◽  
Organic Contamination ◽  
Contamination Control ◽  
Defect Control ◽  
Leak Tightness ◽  
Oxide Removal ◽  
Silicon Silicon ◽  
Cluster Tool

This paper demonstrates that defect control is greatly improved when using the protected environment of a vertical reactor cluster tool comprising a preclean station. The cluster tool investigated combines the established process stability of vertical reactors with new capabilities as native oxide removal, ultraclean wafer transport, and reactors shielded from enviromental contamination. An adequate combination of clean gas usage and leak tightness makes it possible to apply HF vapor etching effectively in order to control the properties of the silicon-silicon oxide interface. For different precleaning conditions, interface and bulk contamination was measured, the sources identified, and the effect of improvements monitored. To this end, several electrical parameters were determined, including the analysis of Qhd and Ehd. Quantitative TXRF and SIMS techniques were used to correlate the results with metallic and organic contamination.

Direct inversion of interfacial reflectivity data using the Patterson function

2003 ◽  
Vol 36 (6) ◽  
pp. 1352-1355 ◽  
Author(s):  
Benoît Bataillou ◽  
Hubert Moriceau ◽  
François Rieutord
Keyword(s):  
Silicon Oxide ◽  
Model Fitting ◽  
Phase Problem ◽  
Oxide Interface ◽  
X Ray ◽  
Patterson Function ◽  
Direct Inversion ◽  
Scattering Technique ◽  
Reflectivity Data ◽  
Silicon Silicon

It is shown here that the interfacial profile between two bonded wafers can be directly determined using X-ray reflectivity without resorting to standard model-fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.

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