Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
2004 ◽  
Vol 832 ◽  
Author(s):  
B. V. Kamenev ◽  
H. Grebel ◽  
L. Tsybeskov ◽  
V. Yu. Timoshenko

ABSTRACTStructural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO2) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5–8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11–15 mJ/cm2 for pulsed irradiation by 248 nm, π∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.


2005 ◽  
Author(s):  
Pavel K. Kashkarov ◽  
Olga A. Shalygina ◽  
Denis M. Zhigunov ◽  
Dmitri A. Sapun ◽  
Sergei A. Teterukov ◽  
...  

1984 ◽  
Vol 37 (1) ◽  
pp. 17 ◽  
Author(s):  
FC Barker

On the basis of a weak-coupling model, adjustments are made to the interactions used in the full shell model calculations of Millener in order to fit the experimental energies of the low-lying negativeparity levels of 16N and of the low-lying positive-parity levels of 180 and 190 . The predicted energies of the low-lying negative-parity levels of 17N then agree better with experiment, while those for 18N lead to suggested spin assignments for the observed levels.


2016 ◽  
Vol 2016 (3) ◽  
Author(s):  
Jorge Casalderrey-Solana ◽  
Doga Can Gulhan ◽  
José Guilherme Milhano ◽  
Daniel Pablos ◽  
Krishna Rajagopal

1977 ◽  
Vol 16 (1) ◽  
pp. 76-79 ◽  
Author(s):  
J. E. Purcell ◽  
M. R. Meder

1997 ◽  
Author(s):  
Kent S. Johnson ◽  
Karl K. Berggren ◽  
Andrew J. Black ◽  
Charles T. Black ◽  
Arthur P. Chu ◽  
...  

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