Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology

Author(s):  
Xin Lin ◽  
Ronghua Zhu
Keyword(s):  
1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.


1988 ◽  
Vol 9 (8) ◽  
pp. 405-407 ◽  
Author(s):  
T. Won ◽  
C.W. Litton ◽  
H. Morkoc ◽  
A. Yariv

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  

1979 ◽  
Vol 15 (3) ◽  
pp. 86 ◽  
Author(s):  
Y.S. Wu ◽  
H.T. Yuan ◽  
W.R. Wisseman

1989 ◽  
Vol 10 (4) ◽  
pp. 168-170 ◽  
Author(s):  
A. Ezis ◽  
L.L. Liou ◽  
K. Ikossi-Anastasiou ◽  
K.R. Evans ◽  
C.E. Stutz ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document