2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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9781509004843

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Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738946 ◽

2016 ◽

Author(s):

Jeff A. Babcock ◽

Joel Halbert ◽

Hiroshi Yasuda ◽

Alexei Sadovnikov ◽

Jonggook Kim ◽

...

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Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738972 ◽

2016 ◽

Cited By ~ 1

Author(s):

John D. Cressler

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Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738958 ◽

2016 ◽

Cited By ~ 6

Author(s):

G. G. Fischer

Keyword(s):

Mixed Mode ◽

Ageing Rate ◽

Mode Stress

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SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738971 ◽

2016 ◽

Cited By ~ 3

Author(s):

The Linh Nguyen ◽

Arash Izadi ◽

Gilles Denoyer

Keyword(s):

High Speed ◽

High Volume ◽

Optical Interconnect ◽

Sige Bicmos

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Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738954 ◽

2016 ◽

Cited By ~ 18

Author(s):

Herman Jalli Ng ◽

Maciej Kucharski ◽

Dietmar Kissinger

Keyword(s):

Mimo Radar ◽

Fully Differential ◽

Sensor Platform ◽

Radar Applications

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Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738962 ◽

2016 ◽

Cited By ~ 2

Author(s):

A.R. Javed ◽

J. C. Scheytt ◽

U. v. d. Ahe

Keyword(s):

Bicmos Technology ◽

Sige Bicmos ◽

Analog Correlator

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An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738953 ◽

2016 ◽

Cited By ~ 8

Author(s):

Suresh Balanethiram ◽

Anjan Chakravorty ◽

Rosario D'Esposito ◽

Sebastien Fregonese ◽

Thomas Zimmer

Keyword(s):

Thermal Resistance ◽

Iterative Model ◽

Self Consistent

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Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738947 ◽

2016 ◽

Author(s):

Xin Lin ◽

Ronghua Zhu

Keyword(s):

High Gain ◽

Bipolar Transistor

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Applying bipolar transistors in dynamic power supply transmitters

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2016.7738974 ◽

2016 ◽

Author(s):

Earl McCune

Keyword(s):

Power Supply ◽

Bipolar Transistors ◽

Dynamic Power

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways

Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress

SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications

Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications

Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology

An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs

Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology

Applying bipolar transistors in dynamic power supply transmitters

Sponsors

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Beyond the boundaries: Enabling new circuit opportunities by using SiGe HBTs in counterintuitive ways

Analysis and modeling of the long-term ageing rate of SiGe HBTs under mixed-mode stress

SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications

Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications

Linear ultra-broadband NPN-only analog correlator at 33 Gbps in 130 nm SiGe BiCMOS technology

An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs

Novel npn bipolar transistor with high gain, high Early voltage, and high BVceo in an advanced SmartMOS technology

Applying bipolar transistors in dynamic power supply transmitters

Sponsors

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Latest Publications