Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High

Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Very High

Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy

1993 ◽  
Vol 29 (21) ◽  
pp. 1893 ◽  
Author(s):  
J.-I. Song ◽  
W.-P. Hong ◽  
C.J. Palmstro̸m ◽  
J.R. Hayes ◽  
K.B. Chough ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Microwave Characteristics

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

2001 ◽  
Vol 80 (1-3) ◽  
pp. 284-288 ◽  
Author(s):  
G.R. Moriarty ◽  
M. Murtagh ◽  
K. Cherkaoui ◽  
G. Gouez ◽  
P.V. Kelly ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Carbon Doped ◽  
Annealing Study

Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
Zhang Rong ◽  
Yoon Soon Fatt ◽  
Tan Kianhua ◽  
Sun Zhongzhe ◽  
Huang Qingfeng
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Base Material ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Carbon Doped ◽  
Base Current ◽  
Recombination Current

ABSTRACTThis paper reports the characteristics of GaInP/GaAs heterojunction bipolar transistor (HBT) with carbon-doped GaAs base layer grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBr4) as p-type dopant precursor. Hydrofluoric acid (HF) was used to passivate the GaInP/GaAs HBTs. At base bias voltages below 0.8V in the Gummel plot, the base current of large-area devices after HF treatment was greatly reduced. This indicates that the extrinsic base surface recombination current was greatly reduced. After HF treatment, detailed DC characterization of the device performance from 300K to 380K was carried out and the carrier transport properties were investigated. The base current and collector current ideality factors at 300K were 1.12 and 1.01, respectively. This indicates that the space- charge region recombination current in the base is insignificant. From the temperature- dependent Gummel plot, the activation energies of collector current and base current were obtained. For the collector current, the activation energy is 1.4eV, which is close to the bandgap of the GaAs base. This indicates that the collector current is determined by the drift-diffusion process, in which an energy barrier of the same magnitude as the base bandgap is to be overcome by electrons before they reach the collector. For the base current, the activation energy is also 1.4eV, which is close to the bandgap of GaAs, indicating that band-to-band recombination plays a dominant role in the base current. No trap-related recombination was observed for the base and collector currents, which further indicates the high quality carbon-doped GaAs base material for the HBT structures.

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