A high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor with an equilibrium-depleted spike-doped base

1989 ◽  
Vol 10 (4) ◽  
pp. 168-170 ◽  
Author(s):  
A. Ezis ◽  
L.L. Liou ◽  
K. Ikossi-Anastasiou ◽  
K.R. Evans ◽  
C.E. Stutz ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor

Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Very High

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
High Performance ◽  
Response Speed ◽  
High Gain ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Flat Panel Display ◽  
Element Array ◽  
Good Agreement

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor on

1988 ◽  
Vol 9 (8) ◽  
pp. 405-407 ◽  
Author(s):  
T. Won ◽  
C.W. Litton ◽  
H. Morkoc ◽  
A. Yariv
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High

High-gain 9.25 GHz silicon bipolar transistor power amplifier

1979 ◽  
Vol 15 (3) ◽  
pp. 86 ◽  
Author(s):  
Y.S. Wu ◽  
H.T. Yuan ◽  
W.R. Wisseman
Keyword(s):  
Power Amplifier ◽  
High Gain ◽  
Bipolar Transistor
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