Interconnect modeling for high speed digital and RF circuits and systems

2002 ◽  
Author(s):  
V.K. Tripathi
Keyword(s):  
High Speed ◽  
Rf Circuits ◽  
Interconnect Modeling

scholarly journals High-Throughput and Low-Latency Digital Baseband Architecture for Energy-Efficient Wireless VR Systems

Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 815 ◽  
Author(s):  
Seokha Hwang ◽  
Seungsik Moon ◽  
Dongyun Kam ◽  
Inn-Yeal Oh ◽  
Youngjoo Lee
Keyword(s):  
High Speed ◽  
Near Field ◽  
Rf Circuits ◽  
60 Ghz ◽  
Video Streams ◽  
Iterative Processing ◽  
Block Level ◽  
Quality Of Transmission ◽  
Processing Steps

This paper presents a novel baseband architecture that supports high-speed wireless VR solutions using 60 GHz RF circuits. Based on the experimental observations by our previous 60 GHz transceiver circuits, the efficient baseband architecture is proposed to enhance the quality of transmission. To achieve a zero-latency transmission, we define an (106,920, 95,040) interleaved-BCH error-correction code (ECC), which removes iterative processing steps in the previous LDPC ECC standardized for the near-field wireless communication. Introducing the block-level interleaving, the proposed baseband processing successfully scatters the existing burst errors to the small-sized component codes, and recovers up to 1080 consecutive bit errors in a data frame of 106,920 bits. To support the high-speed wireless VR system, we also design the massive-parallel BCH encoder and decoder, which is tightly connected to the block-level interleaver and de-interleaver. Including the high-speed analog interfaces for the external devices, the proposed baseband architecture is designed in 65 nm CMOS, supporting a data rate of up to 12.8 Gbps. Experimental results show that the proposed wireless VR solution can transfer up to 4 K high-resolution video streams without using time-consuming compression and decompression, successfully achieving a transfer latency of 1 ms.

Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits

2003 ◽  
Author(s):  
H. Khalkhali ◽  
S. Mohammadi ◽  
L. P. B. Katehi ◽  
K. Kurabayashi
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Working Fluid ◽  
Thermal Reliability ◽  
Drive Power ◽  
On Chip ◽  
Micrometer Scale

Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.

Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate

2020 ◽  
Vol 1014 ◽  
pp. 75-85
Author(s):  
Min Zhong ◽  
Ying Xi Niu ◽  
Hai Ying Cheng ◽  
Chen Xi Yan ◽  
Zhi Yuan Liu ◽  
...  
Keyword(s):  
High Speed ◽  
Rf Circuits ◽  
Digital Circuit ◽  
Process Technology ◽  
Device Structure ◽  
Power Characteristics ◽  
Channel Current ◽  
Gan Hemt ◽  
Gate Structure ◽  
Recessed Gate

With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.

RF wave visions for circuit analyses and diagnoses by live electrooptic imaging camera

2010 ◽  
Vol 2 (3-4) ◽  
pp. 341-347 ◽  
Author(s):  
Masahiro Tsuchiya ◽  
Takahiro Shiozawa
Keyword(s):  
Wave Propagation ◽  
Electric Field ◽  
Real Time ◽  
High Speed ◽  
Rf Circuits ◽  
Phase Evolution ◽  
Logic Circuit ◽  
Visual Images ◽  
Essential Properties ◽  
Imaging Camera

A novel scheme involving experimental analyses and diagnoses is presented for monitoring radio-frequency (RF) and high-speed circuits. A live electrooptic imaging (LEI) camera is used in the scheme and it provides real-time images of the phase evolution of the RF electric field. Besides, it is demonstrated that essential properties of RF wave propagation are easily grasped from visual images; examples of LEI movies and images from which such essential properties can be identified are presented. The subjects of the LEI observations, analyses, and diagnoses are planar RF circuits and a Gbps-class emitter-coupled-logic circuit. In addition, the results of analyses and diagnoses in the space domain are discussed.

Sign in / Sign up

Export Citation Format

Share Document