High-speed VLSI interconnect modeling based on S-parameter measurements

1993 ◽  
Vol 16 (5) ◽  
pp. 555-562 ◽  
Author(s):  
Y. Eo ◽  
W.R. Eisenstadt
Keyword(s):  
High Speed ◽  
S Parameter ◽  
Interconnect Modeling

Crosstalk Simulation Based on Full Wave S-Parameter Extraction Method between High-Speed Signals

2012 ◽  
Vol 433-440 ◽  
pp. 3514-3520
Author(s):  
Hong Tao Sun ◽  
Shu Guo Xie ◽  
Yan Liu ◽  
Bang Jun Chen
Keyword(s):  
Transmission Lines ◽  
High Speed ◽  
Printed Circuit Board ◽  
Simulation Method ◽  
Parameter Extraction ◽  
Circuit Board ◽  
Frequency Domain Method ◽  
Coupling Mechanism ◽  
Full Wave ◽  
S Parameter

Crosstalk between high speed parallel bus signals is one of the most important signal integrity(SI) issues. In this article, a crosstalk simulation method based on full-wave scattering parameters extraction for transmission lines is researched. First, the coupling mechanism between transmission lines is analyzed using S-Parameter network theory and a fast frequency-domain method for crosstalk calculation is introduced. Then based on this method, some basic rules of crosstalk are studied in details and the method is validated by simulation results which agree well with those of RLGC model. At the end of this paper, a practical crosstalk simulation example between high speed data bus signals on a 8-layered printed circuit board is demonstrated step by step.

Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

2012 ◽  
Vol 4 (6) ◽  
pp. 569-578
Author(s):  
Alaa Saleh ◽  
Abdel Kader El Rafei ◽  
Mountakha Dieng ◽  
Tibault Reveyrand ◽  
Raphael Sommet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Linear Model ◽  
Thermal Model ◽  
High Speed ◽  
Circuit Simulation ◽  
Extraction Procedure ◽  
Low Frequency ◽  
Sige Hbt ◽  
S Parameter ◽  
Non Linear

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

Statistical Analysis Approach to Improve the High Speed Signal Quality by Including the Manufacturing Process Variations of Printed Circuit Board

2010 ◽  
Vol 2010 (1) ◽  
pp. 000428-000433
Author(s):  
Seungyong Baek ◽  
Mike Sapozhnikov ◽  
Warren Meggitt ◽  
Philip Pun ◽  
Jason Visneski ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
High Speed ◽  
Printed Circuit Board ◽  
Mode Conversion ◽  
Process Variation ◽  
Process Variations ◽  
Sensitivity Coefficient ◽  
Circuit Board ◽  
Analysis Approach ◽  
S Parameter

In this paper, we propose a statistical analysis approach to consider the contributions across wide process variation permutations. The methodology is applied to a chip-to-connector high speed differential channel design for a multi-layer PCB. In addition, the contribution factor of each process variation parameter can be determined by the use of a sensitivity analysis. The DOE can be significantly reduced by over 50,000X using the Taguchi method reduction to 27. Finally, we acquire the sensitivity coefficient of each process variation parameters and probability distribution function of differential impedance, insertion loss, return loss and mode-conversion. And ±3σ impedance values were calculated and the statistical s-parameters are plotted. From these results, we can increase the confidence level of correlation between simulation and measurement because the proposed approach let us know the trend of variation of impedance and s-parameter by process variation.

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