Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

J. S. Major; L. J. Guido; K. C. Hsieh; N. Holonyak; W. Stutius; P. Gavrilovic; J. E. Williams

doi:10.1063/1.100806

Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

Applied Physics Letters ◽

10.1063/1.100806 ◽

1989 ◽

Vol 54 (10) ◽

pp. 913-915 ◽

Cited By ~ 42

Author(s):

J. S. Major ◽

L. J. Guido ◽

K. C. Hsieh ◽

N. Holonyak ◽

W. Stutius ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Layer ◽

Buried Heterostructure ◽

Low Threshold

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Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

Applied Physics Letters ◽

10.1063/1.107377 ◽

1992 ◽

Vol 60 (1) ◽

pp. 6-8 ◽

Cited By ~ 68

Author(s):

Z. L. Liau ◽

S. C. Palmateer ◽

S. H. Groves ◽

J. N. Walpole ◽

L. J. Missaggia

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Layer ◽

Buried Heterostructure ◽

Low Threshold ◽

Cladding Layers

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Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering

Applied Physics Letters ◽

10.1063/1.99966 ◽

1988 ◽

Vol 53 (16) ◽

pp. 1459-1461 ◽

Cited By ~ 5

Author(s):

J. E. Epler ◽

R. L. Thornton ◽

W. J. Mosby ◽

T. L. Paoli

Keyword(s):

Quantum Well ◽

Excimer Laser ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Low Threshold

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

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Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

Applied Physics Letters ◽

10.1063/1.107788 ◽

1992 ◽

Vol 61 (7) ◽

pp. 755-757 ◽

Cited By ~ 11

Author(s):

W. T. Tsang ◽

R. Kapre ◽

M. C. Wu ◽

Y. K. Chen

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Chemical Beam Epitaxy ◽

Strained Layer ◽

Low Threshold ◽

Cladding Layers

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Low-Threshold $\bf 1.3\,\mbi{\mu}m$ Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l634 ◽

1996 ◽

Vol 35 (Part 2, No. 5B) ◽

pp. L634-L636 ◽

Cited By ~ 4

Author(s):

Mika Toivonen ◽

Pekka Savolainen ◽

Harry Asonen ◽

Richard Murison

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Strained Layer ◽

Low Threshold ◽

Multi Quantum Well

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Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

Applied Physics Letters ◽

10.1063/1.99119 ◽

1988 ◽

Vol 52 (17) ◽

pp. 1371-1373 ◽

Cited By ~ 13

Author(s):

J. E. Epler ◽

R. L. Thornton ◽

T. L. Paoli

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Low Threshold

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Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

Journal of Applied Physics ◽

10.1063/1.347473 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7892-7894 ◽

Cited By ~ 12

Author(s):

C. P. Chao ◽

S. Y. Hu ◽

K‐K. Law ◽

B. Young ◽

J. L. Merz ◽

...

Keyword(s):

Quantum Well ◽

Ridge Waveguide ◽

Waveguide Structure ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Low Threshold ◽

Ridge Waveguide Structure

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Investigation of effect of strain on low-threshold 1.3 µm InGaAsP strained-layer quantum well lasers

Electronics Letters ◽

10.1049/el:19940560 ◽

1994 ◽

Vol 30 (10) ◽

pp. 788-789 ◽

Cited By ~ 24

Author(s):

T. Tsuchiya ◽

M. Komori ◽

K. Uomi ◽

A. Oka ◽

T. Kawano ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Layer ◽

Low Threshold

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Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

IEEE Photonics Technology Letters ◽

10.1109/68.329626 ◽

1994 ◽

Vol 6 (10) ◽

pp. 1165-1166 ◽

Cited By ~ 17

Author(s):

T. Yamamoto ◽

T. Watanabe ◽

S. Ide ◽

I. Tanaka ◽

H. Nobuhara ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Modulation Doping ◽

Strained Layer ◽

Low Threshold

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Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers

Journal of Applied Physics ◽

10.1063/1.336265 ◽

1985 ◽

Vol 58 (12) ◽

pp. 4515-4520 ◽

Cited By ~ 66

Author(s):

D. G. Deppe ◽

K. C. Hsieh ◽

N. Holonyak ◽

R. D. Burnham ◽

R. L. Thornton

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Low Threshold

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