Reduced turn-on delay time in 1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

1996 ◽  
Vol 8 (10) ◽  
pp. 1297-1298 ◽  
Author(s):  
K. Nakahara ◽  
K. Uomi ◽  
T. Haga ◽  
T. Taniwatari ◽  
A. Oishi
Keyword(s):  
Delay Time ◽  
Turn On ◽  
Buried Heterostructure ◽  
Multiquantum Well

Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers

1995 ◽  
Vol 31 (10) ◽  
pp. 809-811 ◽  
Author(s):  
K. Nakahara ◽  
A. Niwa ◽  
K. Uomi ◽  
T. Tsuchiya
Keyword(s):  
Delay Time ◽  
Turn On ◽  
Multiquantum Well

Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–Thyristors

2019 ◽  
Vol 66 (4) ◽  
pp. 1827-1830
Author(s):  
O. S. Soboleva ◽  
A. A. Podoskin ◽  
V. S. Golovin ◽  
P. S. Gavrina ◽  
V. V. Zolotarev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Delay Time ◽  
High Power Lasers ◽  
Turn On

1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy

1991 ◽  
Vol 59 (24) ◽  
pp. 3084-3086 ◽  
Author(s):  
W. T. Tsang ◽  
F. S. Choa ◽  
R. A. Logan ◽  
T. Tanbun‐Ek ◽  
M. C. Wu ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Buried Heterostructure ◽  
Multiquantum Well

The turn-on delay time of silicon p-n-p-n switches

1970 ◽  
Vol 58 (5) ◽  
pp. 792-793 ◽  
Author(s):  
Hua Quen Tserng ◽  
H.R. Plumlee
Keyword(s):  
Delay Time ◽  
Turn On

Measurement and simulation of the turn-on delay time jitter in gain-switched semiconductor lasers

1992 ◽  
Vol 28 (2) ◽  
pp. 441-446 ◽  
Author(s):  
A.G. Weber ◽  
W. Ronghan ◽  
E.H. Bottcher ◽  
M. Schell ◽  
D. Bimberg
Keyword(s):  
Semiconductor Lasers ◽  
Delay Time ◽  
Time Jitter ◽  
Turn On
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