1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy

1991 ◽  
Vol 59 (24) ◽  
pp. 3084-3086 ◽  
Author(s):  
W. T. Tsang ◽  
F. S. Choa ◽  
R. A. Logan ◽  
T. Tanbun‐Ek ◽  
M. C. Wu ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Buried Heterostructure ◽  
Multiquantum Well

Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

1992 ◽  
Vol 28 (2) ◽  
pp. 154 ◽  
Author(s):  
J.W. Xiao ◽  
J.Y. Xu ◽  
G.W. Yang ◽  
J.M. Zhang ◽  
Z.T. Xu ◽  
...  
Keyword(s):  
Threshold Current ◽  
Buried Heterostructure ◽  
Low Threshold ◽  
Multiquantum Well

Chemical beam epitaxy of GaAsN∕GaAs multiquantum well solar cell

2007 ◽  
Vol 25 (3) ◽  
pp. 987 ◽  
Author(s):  
A. Freundlich ◽  
A. Fotkatzikis ◽  
L. Bhusal ◽  
L. Williams ◽  
A. Alemu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Chemical Beam Epitaxy ◽  
Multiquantum Well

Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

1997 ◽  
Vol 71 (1) ◽  
pp. 13-15 ◽  
Author(s):  
J. F. Carlin ◽  
A. V. Syrbu ◽  
C. A. Berseth ◽  
J. Behrend ◽  
A. Rudra ◽  
...  
Keyword(s):  
Laser Diode ◽  
Chemical Beam Epitaxy ◽  
Low Threshold ◽  
Multiquantum Well

Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

1985 ◽  
Vol 46 (1) ◽  
pp. 19-21 ◽  
Author(s):  
N. K. Dutta ◽  
S. G. Napholtz ◽  
R. Yen ◽  
R. L. Brown ◽  
T. M. Shen ◽  
...  
Keyword(s):  
Performance Characteristics ◽  
Buried Heterostructure ◽  
And Performance ◽  
Double Channel ◽  
Multiquantum Well
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