Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

1996 ◽  
Vol 8 (3) ◽  
pp. 328-330 ◽  
Author(s):  
A. Niwa ◽  
T. Ohtoshi ◽  
K. Uomi ◽  
K. Nakahara
Keyword(s):  
Quantum Well ◽  
Delay Time ◽  
Quantum Well Lasers ◽  
Turn On ◽  
Strained Quantum Well ◽  
Doping Type

Carrier transport and its effect on the turn-on delay time in strained GalnAsP/InP multiple quantum well lasers

1994 ◽  
Vol 26 (7) ◽  
pp. S843-S855 ◽  
Author(s):  
T. Fukushima ◽  
T. Namegaya ◽  
Y. Ikegami ◽  
H. Nakayama ◽  
N. Matsumoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Delay Time ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Turn On
Sign in / Sign up

Export Citation Format

Share Document