Measurement and simulation of the turn-on delay time jitter in gain-switched semiconductor lasers

1992 ◽  
Vol 28 (2) ◽  
pp. 441-446 ◽  
Author(s):  
A.G. Weber ◽  
W. Ronghan ◽  
E.H. Bottcher ◽  
M. Schell ◽  
D. Bimberg
Keyword(s):  
Semiconductor Lasers ◽  
Delay Time ◽  
Time Jitter ◽  
Turn On

Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers

1995 ◽  
Vol 31 (10) ◽  
pp. 809-811 ◽  
Author(s):  
K. Nakahara ◽  
A. Niwa ◽  
K. Uomi ◽  
T. Tsuchiya
Keyword(s):  
Delay Time ◽  
Turn On ◽  
Multiquantum Well

Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–Thyristors

2019 ◽  
Vol 66 (4) ◽  
pp. 1827-1830
Author(s):  
O. S. Soboleva ◽  
A. A. Podoskin ◽  
V. S. Golovin ◽  
P. S. Gavrina ◽  
V. V. Zolotarev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Delay Time ◽  
High Power Lasers ◽  
Turn On

The turn-on delay time of silicon p-n-p-n switches

1970 ◽  
Vol 58 (5) ◽  
pp. 792-793 ◽  
Author(s):  
Hua Quen Tserng ◽  
H.R. Plumlee
Keyword(s):  
Delay Time ◽  
Turn On

Experimental observation of time jitter in semiconductor laser turn‐on

1988 ◽  
Vol 52 (26) ◽  
pp. 2203-2204 ◽  
Author(s):  
P. Spano ◽  
A. D’Ottavi ◽  
A. Mecozzi ◽  
B. Daino
Keyword(s):  
Semiconductor Laser ◽  
Experimental Observation ◽  
Time Jitter ◽  
Turn On

Turn-on jitter of external-cavity semiconductor lasers

1994 ◽  
Vol 30 (2) ◽  
pp. 241-248 ◽  
Author(s):  
E. Hernandez-Garcia ◽  
C.R. Mirasso ◽  
K.A. Shore ◽  
M.S. Miguel
Keyword(s):  
Semiconductor Lasers ◽  
External Cavity ◽  
Turn On ◽  
External Cavity Semiconductor Lasers

Modeling and Simulation of VCSEL’s Turn-on Delay Based on Rate-Equations

2011 ◽  
Vol 110-116 ◽  
pp. 3364-3370
Author(s):  
Xin Zhi Shi ◽  
Chang Qi ◽  
Gao Feng Wang ◽  
Ji Cheng Hu ◽  
Feng Liu
Keyword(s):  
Thermal Behavior ◽  
Semiconductor Lasers ◽  
Rate Equations ◽  
Cavity Surface ◽  
Turn On ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
New Generation ◽  
Vertical Cavity

Vertical-Cavity Surface-Emitting Lasers (VCSELs) are a new generation of semiconductor lasers that have many advantages. In this paper, we present a comprehensive circuit-level VCSEL model that addresses the spatial and thermal behavior of VCSELs including turn on delay based on the rate equations without sacrificing the numerical efficiency demanded by the circuit-level simulation of optoelectronic systems. It is implemented into SPICE-like simulators to simulate the dc, ac and transient features (including turn-on delay and turn-off effect) of VCSELs. The simulated results exhibit good agreements with references.

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