Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current

1993 ◽  
Vol 5 (2) ◽  
pp. 117-119 ◽  
Author(s):  
T. Fukushima ◽  
A. Kasukawa ◽  
M. Iwase ◽  
T. Namegaya ◽  
M. Shibata
Keyword(s):  
Quantum Well ◽  
Delay Time ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Turn On ◽  
Double Quantum Well ◽  
Low Threshold

High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers

1992 ◽  
Vol 60 (11) ◽  
pp. 1295-1297 ◽  
Author(s):  
B. Zhao ◽  
T. R. Chen ◽  
Y. H. Zhuang ◽  
A. Yariv ◽  
J. E. Ungar ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Low Threshold

Wavelength and threshold current variation in inhomogeneously pumped InGaAs/AlGaAs single and double quantum well ridge wave-guide lasers

1992 ◽  
Vol 70 (10-11) ◽  
pp. 908-913
Author(s):  
K. A. McGreer ◽  
D. Moss ◽  
R. L. Williams ◽  
M. Dion ◽  
D. Landheer
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Wave Guide ◽  
Double Quantum ◽  
Wavelength Shift ◽  
Exponential Dependence ◽  
Lasing Wavelength ◽  
Output Wavelength ◽  
Double Quantum Well ◽  
Current Variation

We investigate the wavelength and threshold current variation with passive wave-guide length in inhomogeneously pumped single and double quantum well InGaAs/AlGaAs strained layer ridge wave-guide lasers. We observe a linear and extremely low increase in threshold current with unpumped length, both for single and double quantum well lasers. A large red shift in the lasing wavelength as the unpumped length is increased is also observed. We present a model, based on absorption saturation in the unpumped section, which describes both the wavelength shift and the threshold current variation. The increase in threshold current that we observe is much smaller than results reported in the literature for GaAs/AlGaAs lasers, where a large exponential dependence was attributed to gain saturation in the pumped section. Because the threshold current does not dramatically vary with unpumped length for our lasers, this is a potentially useful technique for shifting the output wavelength of the laser. Finally, we investigate the wavelength tuning behavior of lasers having two segments pumped with different currents. A wavelength tunability of ~13 nm for the DQW laser was observed.

Single and double quantum well lasers with a monolithically integrated passive section

1990 ◽  
Vol 57 (8) ◽  
pp. 810-812 ◽  
Author(s):  
J. Werner ◽  
T. P. Lee ◽  
E. Kapon ◽  
E. Colas ◽  
N. G. Stoffel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Monolithically Integrated ◽  
Double Quantum Well

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

Dynamics and Temperature-Dependence of 1.3-$\mu{\hbox {m}}$ GaInNAs Double Quantum-Well Lasers

2006 ◽  
Vol 42 (12) ◽  
pp. 1274-1280 ◽  
Author(s):  
Yongqiang Wei ◽  
J.S. Gustavsson ◽  
M. Sadeghi ◽  
Shumin Wang ◽  
A. Larsson
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Double Quantum Well

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

1992 ◽  
Vol 4 (11) ◽  
pp. 1189-1191 ◽  
Author(s):  
P.L. Derry ◽  
H.E. Hager ◽  
K.C. Chiu ◽  
D.J. Booher ◽  
E.C. Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Strained Quantum Well ◽  
High Temperature Operation
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