High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique

1995 ◽  
Vol 7 (8) ◽  
pp. 828-829 ◽  
Author(s):  
T. Higashi ◽  
T. Takeuchi ◽  
K. Morito ◽  
M. Matsuda ◽  
H. Soda
Keyword(s):  
High Temperature ◽  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching ◽  
Cw Operation ◽  
Buried Heterostructure

scholarly journals Patterned Porous Silicon Prepared by Reactive Ion Etching Technique

2019 ◽  
Vol 578 ◽  
pp. 012019
Author(s):  
R Suryana ◽  
N D Pratiwi ◽  
M Handayani ◽  
M Santika ◽  
O Nakatsuka
Keyword(s):  
Porous Silicon ◽  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching

Three-dimensional photonic crystals developed by double-angled reactive-ion etching technique

2009 ◽  
Author(s):  
Katsuyoshi Suzuki ◽  
Shigeki Takahashi ◽  
Makoto Okano ◽  
Masahiro Imada ◽  
Kenji Ishizaki ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Etching Technique ◽  
Ion Etching

Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

2015 ◽  
Vol 1109 ◽  
pp. 64-68
Author(s):  
Q. Humayun ◽  
U. Hashim
Keyword(s):  
Reactive Ion Etching ◽  
Electrical Characterization ◽  
Coated Sample ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Etching Technique ◽  
Ion Etching ◽  
Gap Spacing ◽  
Gap Structure

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

Reactive Ion Etching of Copper with SiCl4 and CCl2F2

1990 ◽  
Vol 201 ◽  
Author(s):  
B. J. Howard ◽  
S. K. Wolterman ◽  
W. J. Yoo ◽  
B. Gittleman ◽  
CH. SteinbrÜchel
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Amorphous Carbon ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Gas Composition ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Etch Rates ◽  
Interconnect Material

AbstractCopper may become an alternative to aluminum as an interconnect material in future multilevel metallization schemes if it is possible to pattern Cu by dry etching in a manufacturable process. Here we report results on the reactive ion etching of Cu in SiCl4 /Ar, SiCl4/N2, and CCl2F2/Ar plasmas. Etch rates have been investigated as a function of various plasma parameters, such as gas composition, pressure, etc., and substrate temperature. We have obtained etch rates as high as 850 Å /min with SiCl4/N2 and a substrate temperature of ∼ 200 ° C. Also, it appears feasible to pattern Cu anisotropically using either polyimide or amorphous carbon as a high-temperature etch mask.

scholarly journals High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085111 ◽  
Author(s):  
Chia-Pin Yeh ◽  
Marco Lisker ◽  
Bodo Kalkofen ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ar Plasma
Sign in / Sign up

Export Citation Format

Share Document