scholarly journals High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085111 ◽  
Author(s):  
Chia-Pin Yeh ◽  
Marco Lisker ◽  
Bodo Kalkofen ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ar Plasma

Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma

Vacuum ◽  
2020 ◽  
Vol 181 ◽  
pp. 109421
Author(s):  
Moon Hwan Cha ◽  
Eun Taek Lim ◽  
Sung Yong Park ◽  
Ji Su Lee ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Plasma

Inductively coupled plasma reactive ion etching of titanium nitride thin films in a Cl2/Ar plasma

2008 ◽  
Vol 14 (3) ◽  
pp. 297-302 ◽  
Author(s):  
Su Ryun Min ◽  
Han Na Cho ◽  
Yue Long Li ◽  
Sung Keun Lim ◽  
Seung Pil Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Plasma

High density plasma reactive ion etching of CoFeB magnetic thin films using a CH4/Ar plasma

2012 ◽  
Vol 521 ◽  
pp. 216-221 ◽  
Author(s):  
Eun Ho Kim ◽  
Tea Young Lee ◽  
Byoung Chul Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Magnetic Thin Films ◽  
High Density ◽  
Ion Etching ◽  
Ar Plasma ◽  
Density Plasma

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Reactive Ion Etching of Al-1%Cu alloy thin films

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Cu Alloy

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

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