InP LD with PD fabricated by Br2–reactive—ion–etching technique

1989 ◽  
Vol 72 (4) ◽  
pp. 26-32
Author(s):  
Hiraaki Tsujii ◽  
Kiyoshi Ohnaka ◽  
Jun Shibata
Keyword(s):  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching

scholarly journals Patterned Porous Silicon Prepared by Reactive Ion Etching Technique

2019 ◽  
Vol 578 ◽  
pp. 012019
Author(s):  
R Suryana ◽  
N D Pratiwi ◽  
M Handayani ◽  
M Santika ◽  
O Nakatsuka
Keyword(s):  
Porous Silicon ◽  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching

Three-dimensional photonic crystals developed by double-angled reactive-ion etching technique

2009 ◽  
Author(s):  
Katsuyoshi Suzuki ◽  
Shigeki Takahashi ◽  
Makoto Okano ◽  
Masahiro Imada ◽  
Kenji Ishizaki ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Etching Technique ◽  
Ion Etching

Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

2015 ◽  
Vol 1109 ◽  
pp. 64-68
Author(s):  
Q. Humayun ◽  
U. Hashim
Keyword(s):  
Reactive Ion Etching ◽  
Electrical Characterization ◽  
Coated Sample ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Etching Technique ◽  
Ion Etching ◽  
Gap Spacing ◽  
Gap Structure

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

scholarly journals Double heterostructure lasers with facets formed by a hybrid wet and reactive‐ion‐etching technique

1985 ◽  
Vol 57 (8) ◽  
pp. 2948-2950 ◽  
Author(s):  
J. Salzman ◽  
T. Venkatesan ◽  
S. Margalit ◽  
A. Yariv
Keyword(s):  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching ◽  
Double Heterostructure

Thermal reactive ion etching technique involving use of self-heated cathode

2015 ◽  
Vol 86 (4) ◽  
pp. 045001 ◽  
Author(s):  
S. Yamada ◽  
Y. Minami ◽  
M. Sohgawa ◽  
T. Abe
Keyword(s):  
Reactive Ion Etching ◽  
Use Of Self ◽  
Etching Technique ◽  
Ion Etching ◽  
Heated Cathode

Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Mahdieh Mehran ◽  
Zeinab Sanaee ◽  
Shamsoddin Mohajerzadeh
Keyword(s):  
Silicon Surface ◽  
Oil Spills ◽  
Reactive Ion Etching ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Gas Flows ◽  
Plasma Power ◽  
Etching Technique ◽  
Ion Etching ◽  
Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

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