Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission

1995 ◽  
Vol 8 (3) ◽  
pp. 346-351 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

1994 ◽  
Vol 342 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass ◽  
Wafer Temperature ◽  
Single Pass ◽  
Transmission Technique

ABSTRACTThe infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Bonding of 2 mm thick silicon wafers using LTCC as an intermediate layer

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000436-000440 ◽  
Author(s):  
S. Günschmann ◽  
M. Fischer ◽  
T. Bley ◽  
I. Käpplinger ◽  
W. Brode ◽  
...  
Keyword(s):  
High Pressure ◽  
Wafer Bonding ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Anodic Bonding ◽  
Silicon Substrates ◽  
Infrared Transmission ◽  
Fusion Bonding ◽  
Internal Side ◽  
Bonding Technique

For the fabrication of a micro fluidic high pressure oil sensor (400 bar) based on an infrared transmission measuring principle the bonding of 2 mm silicon wafers is necessary. Conventional bonding techniques such as silicon fusion bonding or anodic bonding are not suitable for bonding thick and inflexible silicon wafers, because these techniques can not compensate for the wafer bow. We present a new bonding procedure for silicon substrates thicker than 1 mm using a silicon adapted LTCC tape as an intermediate leveling layer. The wafers are preprocessed by etching a nano structured silicon surface on the internal side. The silicon wafers are aligned and stacked with pre-structured green LTCC tapes by an optical stacking unit. During the hot isostatic lamination at 55 bar the structured LTCC tape is adjusted to the silicon. A subsequent pressure assisted sintering leads to a wafer bonding strength up to 5000 N/cm2. With the bonding technique it is possible to create cavities and channels between the thick wafers by the use of punched and laser cut LTCC. The fabrication steps of the sandwich build-up especially the sequential lamination and the optical adjusting procedure of the flexible (LTCC) and inflexible (2 mm Wafer) substrates will be explained in detail. A method to reduce the shrinkage and distortion of the green LTCC during handling is demonstrated. The distribution of the bonding and bursting strength of the single fluidic systems on a complete sandwich substrate is analyzed.

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

1998 ◽  
Vol 525 ◽  
Author(s):  
Dan Klimek ◽  
Brian Anthonyt ◽  
Agostino Abbate ◽  
Petros Kotidis
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Thickness Variation ◽  
Laser Ultrasonic ◽  
Ultrasonic Methods ◽  
Wafer Thickness ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

ABSTRACTResults are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

scholarly journals Temperature Measurement of Silicon Wafers Using Photoacoustic Techniques

1990 ◽  
pp. 1109-1114
Author(s):  
Y. J. Lee ◽  
C. H. Chou ◽  
B. T. Khuri-Yakub ◽  
K. Saraswat ◽  
M. Moslehi
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafers ◽  
Photoacoustic Techniques
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