Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

1998 ◽  
Vol 525 ◽  
Author(s):  
Dan Klimek ◽  
Brian Anthonyt ◽  
Agostino Abbate ◽  
Petros Kotidis
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Thickness Variation ◽  
Laser Ultrasonic ◽  
Ultrasonic Methods ◽  
Wafer Thickness ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

ABSTRACTResults are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

1992 ◽  
Vol 260 ◽  
Author(s):  
P. Vandenabeele ◽  
R. J. Schreutelkamp ◽  
K. Maex ◽  
C. Vermeiren ◽  
W. Coppye
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Measurement Technique ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Determination ◽  
Optical Detector ◽  
Accurate Temperature ◽  
Temperature Measurement Technique

ABSTRACTA prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

2008 ◽  
Vol 573-574 ◽  
pp. 35-43 ◽  
Author(s):  
Nicolaas Stolwijk ◽  
Ludmila Lerner ◽  
Axel Giese ◽  
Wilfried Lerch
Keyword(s):  
Temperature Measurement ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Isothermal Annealing ◽  
Diffusion Processes ◽  
Fast Diffusion ◽  
Scientific Impact ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.

Accurate temperature measurement of a spectral beam combination grating based on VO2 film

2020 ◽  
Vol 59 (14) ◽  
pp. 4461
Author(s):  
Jiao Xu ◽  
Junming Chen ◽  
Dongping Zhang ◽  
Yonglu Wang ◽  
Yibin Zhang ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Beam Combination ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Rapid thermal processing of silicon wafers with emissivity patterns

2006 ◽  
Vol 35 (5) ◽  
pp. 877-891 ◽  
Author(s):  
M. Rabus ◽  
A. T. Fiory ◽  
N. M. Ravindra ◽  
P. Frisella ◽  
A. Agarwal ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers
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