A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope

2008 ◽  
pp. 325-325-10
Author(s):  
K Krishnan ◽  
D Kuehl
Keyword(s):  
Spatial Distribution ◽  
Oxygen Content ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Transmission Microscope

Bonding of 2 mm thick silicon wafers using LTCC as an intermediate layer

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000436-000440 ◽  
Author(s):  
S. Günschmann ◽  
M. Fischer ◽  
T. Bley ◽  
I. Käpplinger ◽  
W. Brode ◽  
...  
Keyword(s):  
High Pressure ◽  
Wafer Bonding ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Anodic Bonding ◽  
Silicon Substrates ◽  
Infrared Transmission ◽  
Fusion Bonding ◽  
Internal Side ◽  
Bonding Technique

For the fabrication of a micro fluidic high pressure oil sensor (400 bar) based on an infrared transmission measuring principle the bonding of 2 mm silicon wafers is necessary. Conventional bonding techniques such as silicon fusion bonding or anodic bonding are not suitable for bonding thick and inflexible silicon wafers, because these techniques can not compensate for the wafer bow. We present a new bonding procedure for silicon substrates thicker than 1 mm using a silicon adapted LTCC tape as an intermediate leveling layer. The wafers are preprocessed by etching a nano structured silicon surface on the internal side. The silicon wafers are aligned and stacked with pre-structured green LTCC tapes by an optical stacking unit. During the hot isostatic lamination at 55 bar the structured LTCC tape is adjusted to the silicon. A subsequent pressure assisted sintering leads to a wafer bonding strength up to 5000 N/cm2. With the bonding technique it is possible to create cavities and channels between the thick wafers by the use of punched and laser cut LTCC. The fabrication steps of the sandwich build-up especially the sequential lamination and the optical adjusting procedure of the flexible (LTCC) and inflexible (2 mm Wafer) substrates will be explained in detail. A method to reduce the shrinkage and distortion of the green LTCC during handling is demonstrated. The distribution of the bonding and bursting strength of the single fluidic systems on a complete sandwich substrate is analyzed.

Evaluation of Carbon and Oxygen Content of Silicon Wafers Using Infrared Absorption

1980 ◽  
Vol 34 (2) ◽  
pp. 167-171 ◽  
Author(s):  
D. G. Mead ◽  
S. R. Lowry
Keyword(s):  
Fourier Transform ◽  
Oxygen Content ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Fourier Transform Infrared ◽  
Silicon Wafers ◽  
Reference Standard ◽  
Infrared Measurements ◽  
Oxygen Concentrations

Room temperature Fourier transform infrared measurements on some contaminated silicon wafers are presented. Use of subtractive techniques readily allows both carbon and oxygen concentrations of about 0.1 ppm atomic to be obtained in relatively short measurement times (about 1 min), providing an adequate “pure” wafer is used as the reference standard.

scholarly journals Effect of Acid Slag Treatment on the Inclusions in GCr15 Bearing Steel

2019 ◽  
Vol 38 (2019) ◽  
pp. 760-766
Author(s):  
Yang Liu ◽  
Jing Li ◽  
Jinpeng Ge ◽  
Dingli Zheng
Keyword(s):  
Spatial Distribution ◽  
Melting Point ◽  
Oxygen Content ◽  
Bearing Steel ◽  
Refining Slag ◽  
Slag Treatment ◽  
Gcr15 Bearing Steel ◽  
Inclusions In Steel

AbstractBy laboratory slag/steel reaction equilibrim experiments, the viriation of oxygen content, inclusion compositions and inclusion sizes were studied. The effect of acid slag treatment on the transition mechanisms of D-type inclusions and the precipitation of TiN inclusions in GCr15 bearing steel were explored. The obtained results showed that the dominant inclusions in steel were plastic and smaller Al2O3-SiO2-MnO. The melting point were lower than 1400°C treated by the acid refining slag of 35.1%CaO-15%Al2O3-43.9%SiO2-6%MgO and there was no TiN found. The evolution of MgO·Al2O3 inclusions is: MgO·Al2O3→ MgO·Al2O3·SiO2·MnO→ Al2O3·SiO2·MnO. Mg and Al from MgO·Al2O3 inclusions were displaced by [Si] and [Mn] in steel liquid , and formation of plastic Al2O3-SiO2-MnO inclusions finally, whose compositions distribution were uniform. Mg and Si, Mn were complementary in inclusions as to the spatial distribution.

scholarly journals Properties of cores of the water masses in the Okhotsk Sea

2016 ◽  
Vol 184 (1) ◽  
pp. 204-218
Author(s):  
Vladimir A. Luchin ◽  
Andrey A. Kruts
Keyword(s):  
Spatial Distribution ◽  
Dissolved Oxygen ◽  
Oxygen Content ◽  
Sea Water ◽  
Water Masses ◽  
Okhotsk Sea ◽  
Data Set ◽  
Water Properties ◽  
Oceanographic Data

Spatial distribution of depth and water properties (temperature, salinity, dissolved oxygen content) are considered in detail for cores of the Okhotsk Sea water masses: subsurface, intermediate, and deep, on the base of the most comprehensive oceanographic data set.

Size Effect in Silicon Irradiated with Self Ions

2021 ◽  
Vol 23 (3) ◽  
pp. 148-152
Author(s):  
P.A. Aleksandrov ◽  
◽  
E.K. Baranova ◽  
V.V. Budaragin ◽  
V.L. Litvinov ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Size Effect ◽  
Silicon Wafers ◽  
Structural Defects ◽  
Silicon Sample ◽  
Silicon Ions

The influence of the thickness of a silicon sample irradiated by silicon ions on the spatial distribution of primary structural defects, phonons, and induced charges is considered. The calculations were performed using the SRIM2013program. The results can be used to analyze the interaction of other types of radiation with silicon wafers, in particular with neutrons.

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

1994 ◽  
Vol 342 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass ◽  
Wafer Temperature ◽  
Single Pass ◽  
Transmission Technique

ABSTRACTThe infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

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