Temperature Measurement of Silicon Wafers by Transmissivity Sensing

2006 ◽  
Author(s):  
Ryo Shinagawa ◽  
Tomoyuki Iwasaki ◽  
Tohru Iuchi
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafers

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

1998 ◽  
Vol 525 ◽  
Author(s):  
Dan Klimek ◽  
Brian Anthonyt ◽  
Agostino Abbate ◽  
Petros Kotidis
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Thickness Variation ◽  
Laser Ultrasonic ◽  
Ultrasonic Methods ◽  
Wafer Thickness ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

ABSTRACTResults are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

1994 ◽  
Vol 342 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass ◽  
Wafer Temperature ◽  
Single Pass ◽  
Transmission Technique

ABSTRACTThe infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

scholarly journals Temperature Measurement of Silicon Wafers Using Photoacoustic Techniques

1990 ◽  
pp. 1109-1114
Author(s):  
Y. J. Lee ◽  
C. H. Chou ◽  
B. T. Khuri-Yakub ◽  
K. Saraswat ◽  
M. Moslehi
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafers ◽  
Photoacoustic Techniques

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

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