Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage

2000 ◽  
Vol 21 (11) ◽  
pp. 512-514 ◽  
Author(s):  
M. Boudrissa ◽  
E. Delos ◽  
Y. Cordier ◽  
D. Theron ◽  
J.C. De Jaeger
Keyword(s):  
Breakdown Voltage ◽  
Gaas Substrate ◽  
Enhancement Mode ◽  
High Breakdown Voltage

High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment

2011 ◽  
Vol 15 (2) ◽  
pp. H20-H22 ◽  
Author(s):  
H.-C. Chiu ◽  
H.-C. Wang ◽  
C.-K. Lin ◽  
H.-L. Kao ◽  
J. S. Fu ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Thin Film Transistor ◽  
Enhancement Mode ◽  
High Breakdown Voltage

scholarly journals Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

2016 ◽  
Vol 109 (21) ◽  
pp. 213501 ◽  
Author(s):  
Kelson D. Chabak ◽  
Neil Moser ◽  
Andrew J. Green ◽  
Dennis E. Walker ◽  
Stephen E. Tetlak ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
High Breakdown Voltage

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage
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