scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage

scholarly journals GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth

2019 ◽  
Vol 217 (7) ◽  
pp. 1900676
Author(s):  
Arne Debald ◽  
Simon Kotzea ◽  
Jona Riedel ◽  
Michael Heuken ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Selective Area Growth ◽  
High Breakdown Voltage ◽  
Selective Area ◽  
Area Growth

High breakdown voltage Au/Pt/GaN Schottky diodes

2000 ◽  
Vol 18 (4) ◽  
pp. 1135-1138 ◽  
Author(s):  
G. T. Dang ◽  
A. P. Zhang ◽  
M. M. Mshewa ◽  
F. Ren ◽  
J.-I. Chyi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
High Breakdown Voltage

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

2010 ◽  
Vol 207 (9) ◽  
pp. 2088-2092 ◽  
Author(s):  
Pierre-Nicolas Volpe ◽  
Pierre Muret ◽  
Julien Pernot ◽  
Franck Omnès ◽  
Tokuyuki Teraji ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Cvd Diamond ◽  
Diamond Layer ◽  
High Breakdown Voltage ◽  
P Type

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation

2015 ◽  
Vol 51 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Jiangfeng Du ◽  
Nanting Chen ◽  
Peilin Pan ◽  
Zhiyuan Bai ◽  
Liang Li ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gan Hemt ◽  
High Breakdown Voltage ◽  
High K ◽  
Low K
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