High breakdown voltage (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs quasi-enhancement-mode pHEMT with field-plate technology

Hsien-Chin Chiu;  Yi-Chyun Chiang;  Chan-Shin Wu

doi:10.1109/led.2005.855403

High breakdown voltage (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs quasi-enhancement-mode pHEMT with field-plate technology

IEEE Electron Device Letters ◽

10.1109/led.2005.855403 ◽

2005 ◽

Vol 26 (10) ◽

pp. 701-703 ◽

Cited By ~ 6

Author(s):

Hsien-Chin Chiu ◽

Yi-Chyun Chiang ◽

Chan-Shin Wu

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

Enhancement Mode ◽

High Breakdown Voltage

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Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage

9th International Seminar on Power Semiconductors (ISPS 2008) ◽

10.1049/ic:20080190 ◽

2008 ◽

Author(s):

Kyu-Heon Cho ◽

Young-Hwan Choi ◽

Jiyong Lim ◽

Young-Shil Kim ◽

Min-Koo Han

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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Polarization Engineered Enhancement Mode High Breakdown Voltage GaN CAVET

2017 9th IEEE-GCC Conference and Exhibition (GCCCE) ◽

10.1109/ieeegcc.2017.8447991 ◽

2017 ◽

Author(s):

Sajad A. Loan ◽

Sumit Verma ◽

Abdullah G. Alharbi ◽

Asim M. Murshid

Keyword(s):

Breakdown Voltage ◽

Enhancement Mode ◽

High Breakdown Voltage

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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Cited By ~ 24

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

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Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667651 ◽

2010 ◽

Author(s):

Minglan Zhang ◽

Xiaoliang Wang ◽

Mingzeng Peng ◽

Xinyu Liu ◽

Ru Wang

Keyword(s):

Breakdown Voltage ◽

Power Switching ◽

Field Plate ◽

High Breakdown Voltage ◽

Plate Length ◽

Dc Characteristics ◽

Gan Hemts

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Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage

IEEE Electron Device Letters ◽

10.1109/55.877193 ◽

2000 ◽

Vol 21 (11) ◽

pp. 512-514 ◽

Cited By ~ 11

Author(s):

M. Boudrissa ◽

E. Delos ◽

Y. Cordier ◽

D. Theron ◽

J.C. De Jaeger

Keyword(s):

Breakdown Voltage ◽

Gaas Substrate ◽

Enhancement Mode ◽

High Breakdown Voltage

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Passivation-layer thickness and field-plate optimization to obtain high breakdown voltage in AlGaN/GaN HEMTs with short gate-to-drain distance

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114153 ◽

2021 ◽

Vol 121 ◽

pp. 114153

Author(s):

Takuma Iwamoto ◽

Seiya Akiyama ◽

Kazushige Horio

Keyword(s):

Layer Thickness ◽

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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Optimization of an enhancement-mode AlGaN/GaN/AlGaN DHFET towards a high breakdown voltage and low figure of merit

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2017.8170533 ◽

2017 ◽

Cited By ~ 6

Author(s):

Andrew Binder ◽

Jiann-Shiun Yuan

Keyword(s):

Breakdown Voltage ◽

Figure Of Merit ◽

Enhancement Mode ◽

High Breakdown Voltage

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High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.028007 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 028007 ◽

Cited By ~ 62

Author(s):

Yoshitomo Hatakeyama ◽

Kazuki Nomoto ◽

Akihisa Terano ◽

Naoki Kaneda ◽

Tadayoshi Tsuchiya ◽

...

Keyword(s):

Breakdown Voltage ◽

Free Standing ◽

Field Plate ◽

High Breakdown Voltage ◽

Damage Field

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GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage

10.1109/peas53589.2021.9628512 ◽

2021 ◽

Author(s):

Fuping Huang ◽

Chunshuang Chu ◽

Yonghui Zhang ◽

Kangkai Tian ◽

Xingyu Jia ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

Field Plate ◽

High Breakdown Voltage ◽

Low Leakage ◽

Low Leakage Current

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High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment

Electrochemical and Solid-State Letters ◽

10.1149/2.004202esl ◽

2011 ◽

Vol 15 (2) ◽

pp. H20-H22 ◽

Cited By ~ 3

Author(s):

H.-C. Chiu ◽

H.-C. Wang ◽

C.-K. Lin ◽

H.-L. Kao ◽

J. S. Fu ◽

...

Keyword(s):

Thin Film ◽

Plasma Treatment ◽

Breakdown Voltage ◽

Thin Film Transistor ◽

Enhancement Mode ◽

High Breakdown Voltage

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