scholarly journals Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

2016 ◽  
Vol 109 (21) ◽  
pp. 213501 ◽  
Author(s):  
Kelson D. Chabak ◽  
Neil Moser ◽  
Andrew J. Green ◽  
Dennis E. Walker ◽  
Stephen E. Tetlak ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
High Breakdown Voltage

High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors

1992 ◽  
Vol 13 (4) ◽  
pp. 192-194 ◽  
Author(s):  
X. Li ◽  
K.F. Longenbach ◽  
Y. Wang ◽  
W.I. Wang
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage

A Study on Optimization of Planar Gate Type Metal-Oxide-Semiconductor Field-Effect-Transistors Multi Epitaxial Process in Super-Junction Structure

2021 ◽  
Vol 16 (5) ◽  
pp. 738-743
Author(s):  
Chang Hyeon Jo ◽  
Dea Hee Kim ◽  
Hyeong Seong Jo ◽  
O Yong Kwon ◽  
Ey Goo Kang
Keyword(s):  
Metal Oxide ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Reliability ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
High Breakdown Voltage ◽  
Junction Structure

Power metal-oxide-semiconductor field-effect-transistors (MOSFET) is a high voltage control device that requires high reliability and efficiency and is used to improve efficiency in areas such as renewable energy generators, electric vehicles, power supply unit, converters and motor control. Electrical characteristics of the MOSFET include a Threshold voltage which is a voltage for operating the device, an On-resistance which is a device resistance in an on-state, and a breakdown voltage which means a device withstand voltage. A Super-Junction structure is proposed to design the device with a high breakdown voltage and a low on-resistance. A multi-epitaxial Super-Junction MOSFET forms a Pillar layers by injecting continuously P-type impurity at edge on stacked N-Pillar layer. By forming the Pillar region which is higher doping concentration than N-drift, the on resistance can be reduced. In the forward blocking mode, the depletion layer of the Pillar region is extended to both vertical and horizontal sides, for a high breakdown voltage can be obtained. By using a T-CAD tool which is a process simulator, electrical characteristics of 1,200 V class super-junction MOSFET are analyzed along process variables (pillar lateral length, pillar concentration). When the breakdown voltage of the super junction MOSFET and the Planar MOSFET are equal, On-resistance (based on 10 A) has a gain of approximately 20% by a difference of 0.189 ohm×cm. It is believed that this can contribute to the development of super junction MOSFET with improved reliability and electrical characteristics.

AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

2011 ◽  
Vol 50 (8R) ◽  
pp. 084102 ◽  
Author(s):  
Yoshinori Oshimura ◽  
Takayuki Sugiyama ◽  
Kenichiro Takeda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire

2008 ◽  
Vol 5 (6) ◽  
pp. 2013-2015 ◽  
Author(s):  
Junxia Shi ◽  
Y. C. Choi ◽  
M. Pophristic ◽  
M. G. Spencer ◽  
L. F. Eastman
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterojunction Field Effect Transistors

scholarly journals Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors

RSC Advances ◽  
2019 ◽  
Vol 9 (17) ◽  
pp. 9678-9683 ◽  
Author(s):  
Jinho Bae ◽  
Hyoung Woo Kim ◽  
In Ho Kang ◽  
Jihyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Power Electronic ◽  
Field Plate ◽  
High Breakdown Voltage

Field-plated β-Ga2O3 nanoFETs with a breakdown voltage of over 300 V pave a way for downsizing power electronic devices.

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

2018 ◽  
Vol 112 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jinho Bae ◽  
Hyoung Woo Kim ◽  
In Ho Kang ◽  
Gwangseok Yang ◽  
Jihyun Kim
Keyword(s):  
Boron Nitride ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Field Plate ◽  
High Breakdown Voltage
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