RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

2000 ◽  
Vol 21 (6) ◽  
pp. 261-263 ◽  
Author(s):  
Suk-Hun Lee ◽  
Jae-Kyu Chun ◽  
Jae-Jin Hur ◽  
Jae-Seung Lee ◽  
Gi-Hong Rue ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

2008 ◽  
Vol 103 (5) ◽  
pp. 053708 ◽  
Author(s):  
B. Boudjelida ◽  
I. Gee ◽  
J. Evans-Freeman ◽  
S. A. Clark ◽  
T. G. G. Maffeis ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Schottky Contact ◽  
Epitaxial Layers ◽  
High Quality ◽  
Contact Formation

Theory of Schottky-contact formation on GaAs(110)

1991 ◽  
Vol 43 (14) ◽  
pp. 11745-11753 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Theory of Schottky-Contact Formation on GaAs (110)

1991 ◽  
Vol 240 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Surface Region ◽  
Phenomenological Theory ◽  
Compound Formation ◽  
Contact Formation ◽  
Barrier Heights ◽  
Relative Enthalpy ◽  
High Metal ◽  
Low Coverage

ABSTRACTA phenomenological theory of Schottky contact formation to GaAs (110) surfaces at room temperature is discussed. The theory splits into two regimes, low- and high-metal coverages. In the low-coverage regime the movement of the Fermi level is proposed to occur because of universal derelaxation of the GaAs (110) surface. For large metal depositions, the resulting barrier heights are hypothesized to be determined by the interaction of either free (not involved in compound formation with other species) metal or free As with the GaAs surface region. It is shown that based on simple considerations of the relative enthalpy of metal-arsenide formation, it is possible to decide which species is responsible for the barrier height and, thus, to account for the majority of barrier heights to the GaAs (110) surface.

Schottky contact formation on polar and non-polar AlN

2014 ◽  
Vol 116 (19) ◽  
pp. 194503 ◽  
Author(s):  
Pramod Reddy ◽  
Isaac Bryan ◽  
Zachary Bryan ◽  
James Tweedie ◽  
Ronny Kirste ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Schottky contact formation by an insulator: Lithium fluoride on silicon

2021 ◽  
Vol 118 (24) ◽  
pp. 241601
Author(s):  
Shanshan Wan ◽  
Guohua Zhang ◽  
Jens Niederhausen ◽  
Di Wu ◽  
Qi Wang ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Schottky Contact ◽  
Contact Formation

Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films

2010 ◽  
Vol 107 (3) ◽  
pp. 033707 ◽  
Author(s):  
Takahiro Nagata ◽  
Oliver Bierwagen ◽  
Mark E. White ◽  
Min-Ying Tsai ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Oxygen Plasma ◽  
Schottky Contact ◽  
Contact Formation
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