Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

2008 ◽  
Vol 103 (5) ◽  
pp. 053708 ◽  
Author(s):  
B. Boudjelida ◽  
I. Gee ◽  
J. Evans-Freeman ◽  
S. A. Clark ◽  
T. G. G. Maffeis ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Schottky Contact ◽  
Epitaxial Layers ◽  
High Quality ◽  
Contact Formation

A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

2005 ◽  
Vol 34 (1) ◽  
pp. 23-26 ◽  
Author(s):  
Edward Y. Chang ◽  
Tsung-Hsi Yang ◽  
Guangli Luo ◽  
Chun-Yen Chang
Keyword(s):  
Epitaxial Layers ◽  
Si Substrate ◽  
High Quality ◽  
Buffer Structure

Theory of Schottky-contact formation on GaAs(110)

1991 ◽  
Vol 43 (14) ◽  
pp. 11745-11753 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

1985 ◽  
Vol 56 ◽  
Author(s):  
Y. Shinoda ◽  
Y. Ohmachi
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Etching ◽  
Domain Structures ◽  
Homoepitaxial Layers

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Theory of Schottky-Contact Formation on GaAs (110)

1991 ◽  
Vol 240 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Surface Region ◽  
Phenomenological Theory ◽  
Compound Formation ◽  
Contact Formation ◽  
Barrier Heights ◽  
Relative Enthalpy ◽  
High Metal ◽  
Low Coverage

ABSTRACTA phenomenological theory of Schottky contact formation to GaAs (110) surfaces at room temperature is discussed. The theory splits into two regimes, low- and high-metal coverages. In the low-coverage regime the movement of the Fermi level is proposed to occur because of universal derelaxation of the GaAs (110) surface. For large metal depositions, the resulting barrier heights are hypothesized to be determined by the interaction of either free (not involved in compound formation with other species) metal or free As with the GaAs surface region. It is shown that based on simple considerations of the relative enthalpy of metal-arsenide formation, it is possible to decide which species is responsible for the barrier height and, thus, to account for the majority of barrier heights to the GaAs (110) surface.

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

1995 ◽  
Vol 66 (11) ◽  
pp. 1373-1375 ◽  
Author(s):  
O. Kordina ◽  
A. Henry ◽  
J. P. Bergman ◽  
N. T. Son ◽  
W. M. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

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