NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface
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Published By Springer Japan

9784431548492, 9784431548508

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_4 ◽

2020 ◽

pp. 41-67

Author(s):

Takahiro Nagata

Keyword(s):

Redox Reaction ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Structure ◽

Access Memory

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Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_5 ◽

2020 ◽

pp. 69-74

Author(s):

Takahiro Nagata

Keyword(s):

Valence State ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Switching Control ◽

State Control ◽

Access Memory

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Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_3 ◽

2020 ◽

pp. 27-39

Author(s):

Takahiro Nagata

Keyword(s):

Surface Passivation ◽

Schottky Contact ◽

Oxide Semiconductors ◽

Contact Formation

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General Summary

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_7 ◽

2020 ◽

pp. 89-89

Author(s):

Takahiro Nagata

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Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_6 ◽

2020 ◽

pp. 75-87

Author(s):

Takahiro Nagata

Keyword(s):

Thin Film ◽

Film Synthesis

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Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_2 ◽

2020 ◽

pp. 5-26

Author(s):

Takahiro Nagata

Keyword(s):

Single Crystal ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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General Introduction

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface ◽

10.1007/978-4-431-54850-8_1 ◽

2020 ◽

pp. 1-3

Author(s):

Takahiro Nagata

Keyword(s):

General Introduction

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NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide InterfaceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Japan

Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure

Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide

Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors

General Summary

Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials

Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO

General Introduction

NIMS Monographs - Nanoscale Redox Reaction at Metal/Oxide Interface
Latest Publications