scholarly journals Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

2016 ◽  
Vol 8 (35) ◽  
pp. 23167-23174 ◽  
Author(s):  
James Semple ◽  
Stephan Rossbauer ◽  
Thomas D. Anthopoulos
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Schottky Contact ◽  
Contact Formation

Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

2008 ◽  
Vol 103 (5) ◽  
pp. 053708 ◽  
Author(s):  
B. Boudjelida ◽  
I. Gee ◽  
J. Evans-Freeman ◽  
S. A. Clark ◽  
T. G. G. Maffeis ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Schottky Contact ◽  
Epitaxial Layers ◽  
High Quality ◽  
Contact Formation

Fluid and kinetic models of the low temperature H2 plasma produced by a radio-frequency reactor

2008 ◽  
Vol 15 (10) ◽  
pp. 103505 ◽  
Author(s):  
P. Diomede ◽  
A. Michau ◽  
M. Redolfi ◽  
W. Morscheidt ◽  
K. Hassouni ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Kinetic Models

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Theory of Schottky-contact formation on GaAs(110)

1991 ◽  
Vol 43 (14) ◽  
pp. 11745-11753 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Low-Temperature Baking Effect of the Radio-Frequency Nb3Sn Thin Film Superconducting Cavity

2021 ◽  
Vol 38 (9) ◽  
pp. 092901
Author(s):  
Ziqin Yang ◽  
Shichun Huang ◽  
Yuan He ◽  
Xiangyang Lu ◽  
Hao Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Radio Frequency ◽  
Superconducting Cavity

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

scholarly journals High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

2019 ◽  
Vol 100 ◽  
pp. 8-14 ◽  
Author(s):  
A. Núñez-Cascajero ◽  
R. Blasco ◽  
S. Valdueza-Felip ◽  
D. Montero ◽  
J. Olea ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
High Quality ◽  
Radio Frequency Sputtering

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation
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