Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films

2010 ◽  
Vol 107 (3) ◽  
pp. 033707 ◽  
Author(s):  
Takahiro Nagata ◽  
Oliver Bierwagen ◽  
Mark E. White ◽  
Min-Ying Tsai ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Oxygen Plasma ◽  
Schottky Contact ◽  
Contact Formation

Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

2008 ◽  
Vol 103 (5) ◽  
pp. 053708 ◽  
Author(s):  
B. Boudjelida ◽  
I. Gee ◽  
J. Evans-Freeman ◽  
S. A. Clark ◽  
T. G. G. Maffeis ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Schottky Contact ◽  
Epitaxial Layers ◽  
High Quality ◽  
Contact Formation

Theory of Schottky-contact formation on GaAs(110)

1991 ◽  
Vol 43 (14) ◽  
pp. 11745-11753 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Schottky Contact ◽  
Contact Formation

Interaction between model poly(ethylene terephthalate) thin films and weakly ionised oxygen plasma

2011 ◽  
Vol 44 (1) ◽  
pp. 56-61 ◽  
Author(s):  
Aleš Doliška ◽  
Alenka Vesel ◽  
Metod Kolar ◽  
Karin Stana-Kleinschek ◽  
Miran Mozetič
Keyword(s):  
Thin Films ◽  
Oxygen Plasma ◽  
Ethylene Terephthalate ◽  
Poly Ethylene Terephthalate ◽  
Poly Ethylene

scholarly journals Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiangui You ◽  
Kai Huang ◽  
Xiaomeng Zhao ◽  
Ailun Yi ◽  
Chen Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Contact ◽  
Homogeneous Distribution ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Practical Applications ◽  
Crystalline Oxide ◽  
Order Of Magnitude ◽  
Switching Characteristics

AbstractThe abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO3 (LNO) single crystalline thin films are fabricated on Pt/SiO2/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.

Theory of Schottky-Contact Formation on GaAs (110)

1991 ◽  
Vol 240 ◽  
Author(s):  
K. B. Kahen
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Surface Region ◽  
Phenomenological Theory ◽  
Compound Formation ◽  
Contact Formation ◽  
Barrier Heights ◽  
Relative Enthalpy ◽  
High Metal ◽  
Low Coverage

ABSTRACTA phenomenological theory of Schottky contact formation to GaAs (110) surfaces at room temperature is discussed. The theory splits into two regimes, low- and high-metal coverages. In the low-coverage regime the movement of the Fermi level is proposed to occur because of universal derelaxation of the GaAs (110) surface. For large metal depositions, the resulting barrier heights are hypothesized to be determined by the interaction of either free (not involved in compound formation with other species) metal or free As with the GaAs surface region. It is shown that based on simple considerations of the relative enthalpy of metal-arsenide formation, it is possible to decide which species is responsible for the barrier height and, thus, to account for the majority of barrier heights to the GaAs (110) surface.

scholarly journals Secrets revealed — Spatially selective wetting of plasma-patterned periodic mesoporous organosilica

2012 ◽  
Vol 90 (12) ◽  
pp. 1063-1068
Author(s):  
Wendong Wang ◽  
Ian B. Burgess ◽  
Benjamin D. Hatton ◽  
Jack Alvarenga ◽  
Joanna Aizenberg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Information Security ◽  
Oxygen Plasma ◽  
Periodic Mesoporous Organosilica ◽  
Simple Method ◽  
Wetting Properties ◽  
Mesoporous Organosilica ◽  
Selective Wetting

We report a simple method to pattern wetting properties on thin films of periodic mesoporous organosilica (PMO). A hydrophobic methane PMO thin film was covered by masks and exposed to oxygen plasma to make the unmasked area hydrophilic. The wettability patterns could be revealed only when the films were immersed in water or exposed to moisture. We expect that our method would extend the utility of PMO to such areas as sensing and information security.

Preparation and Characterization Of SrTio3 Thin Films Using ECR Plasma Assisted MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Joon Sung Lee ◽  
Han Wook Song ◽  
Dae Sung Yoon ◽  
Byung Hyuk Jun ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Oxygen Plasma ◽  
Grain Structure ◽  
Breakdown Field ◽  
Ecr Plasma ◽  
Step Coverage

ABSTRACTSrTiO3 thin films were prepared on Si(p-type 100) and Pt/SiO2/Si substrates using ECR plasma (or without ECR plasma) assisted MOCVD. Sr(TMI-D)2 and Ti-isopropoxide were used as Sr and Ti metal organic sources, respectively. Perovskite SrTiO3 films were obtained at relatively low temperature of 500°C (using ECR oxygen plasma. Experimental results indicated that higher deposition temperature and ECR oxygen plasma increase the crystallinity, the dielectric constant and the leakage current density. The dielectric constant and the dielectric loss were 222 and 0.04, respectively, for 1234 Å thin SrTiO3 film (Sr/(Sr+Ti)=0.5). The leakage current density was 3.78 × 10−7 A/cm2 at 1.0V, and the dielectric breakdown field was 0.57MV/cm. SEM analyses showed that SrTiO3 films have a uniform and fine grain structure. In terms of step coverage, a lateral step coverage of 50% at 0.8 μm step (the aspect ratio was 1) was obtained with the thickness uniformity of ± 0.5% and the composition uniformity of ±1.2% at 4′′ wafer.

Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AD04 ◽  
Author(s):  
Sang Woo Pak ◽  
Jooyoung Suh ◽  
Dong Uk Lee ◽  
Eun Kyu Kim
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Plasma ◽  
Pulsed Laser ◽  
Laser Deposition

Effect of Oxygen Plasma Treatment on p-Type Electrical Properties of Amorphous La2NiO4+δ Thin Films

2015 ◽  
Vol 10 (4) ◽  
pp. 475-479 ◽  
Author(s):  
Dang-Hoang Hop ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim ◽  
Soo-Young Park ◽  
Inn-Kyu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen
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