MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

1999 ◽  
Vol 20 (6) ◽  
pp. 292-294 ◽  
Author(s):  
Chang-Hoon Choi ◽  
Jung-Suk Goo ◽  
Tae-Young Oh ◽  
Zhiping Yu ◽  
R.W. Dutton ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Gate Oxide Thickness

PCA Characterization of Residual Subsurface Damage After Silicon Wafer Mirror Polishing and its Removal

1999 ◽  
Vol 566 ◽  
Author(s):  
Y. Ogita ◽  
K. Kobayashi ◽  
H. Daio
Keyword(s):  
Direct Evidence ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Mos Devices ◽  
Catching Up ◽  
Gate Oxide Thickness ◽  
Damage Depth ◽  
Thin Gate Oxide ◽  
Straight Lines

Residual subsurface damages introduced by mirror polishing into Si CZ wafers degrade GOI in ULSI MOS devices. A removal of the damage throughout 9 times SC1 cleaning was systematically characterized as correlated between PCA signals measured by noncontact UV/mmwave technique, GOI at 10MV/cm for MOS diodes with a thin gate-oxide thickness of 10nm, surface microroughness Ra measured by AFM. The same characterization was carried out for epitaxial wafers, as reference. Degraded GOI and PCA signal were recovered throughout 3 times SC1 cleaning and did not depend on Ra of 0.1–0.2 nm, which led to that the damage causes the degradation of GOI, but it can be removed by 3 times SC1 cleaning, and the damage depth was about 21nm. Further, the PCA signal well reflects to removal of the damage and degradation of GOI so that it can be a monitor for characterizing the removal and GOI. Direct observation of the damage using OSDA was carried out for the epitaxial wafer polished and SC1 cleaned. The OSDA indicated an image involving straight lines which disappeared after 3 times SC1 cleaning. This gave a direct evidence for catching up it by PCA and existence of residual subsurface damages.

Characterization of Hole Traps Generated by Electron Injection in Thin SiO2 Films

1997 ◽  
Vol 473 ◽  
Author(s):  
Tomasz Brożek ◽  
Eric B. Lum ◽  
Chand R. Viswanathan
Keyword(s):  
Charge Trapping ◽  
Gate Oxide ◽  
Electron Injection ◽  
Oxide Thickness ◽  
Hole Injection ◽  
Kinetics Parameters ◽  
Hole Trapping ◽  
Gate Oxide Thickness ◽  
Injection Dose

ABSTRACTMOS device stability can be significantly affected by charge trapping in the gate oxide, which changes device parameters and causes serious reliability problems in transistors and memory cells. Hole traps, generated by high-field electron injection, are studied in this work in devices with thermal oxides less than 10 nm thick. PMOS transistors, after various doses of positive and negative Fowler-Nordheim injection and post-stress annealing, are subjected to substrate hot hole injection to investigate hole trapping kinetics. Parameters of hole traps, generated under the stress, are studied as a function of gate oxide thickness and electron injection dose.

Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

2007 ◽  
Vol 28 (3) ◽  
pp. 217-219 ◽  
Author(s):  
Meishoku Masahara ◽  
Radu Surdeanu ◽  
Liesbeth Witters ◽  
Gerben Doornbos ◽  
Viet H. Nguyen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Subthreshold Slope ◽  
Gate Oxide Thickness

Gate Tunneling Current Predicting Model for Scaled NMOSFET Devices

2013 ◽  
Vol 772 ◽  
pp. 422-426
Author(s):  
Zhi Chao Zhao ◽  
Tie Feng Wu ◽  
Hui Bin Ma ◽  
Quan Wang ◽  
Jing Li
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Integral Approach ◽  
Predicting Model ◽  
Mos Devices ◽  
Gate Oxide Thickness ◽  
Novel Theory ◽  
Gate Tunneling ◽  
Thin Gate Oxide

With the scaling of MOS devices, gate tunneling current increases significantly due to thinner gate oxides, and static characteristics of devices and circuit are severely affected by the presence of gate tunneling currents. In this paper, a novel theory gate tunneling current predicting model using integral approach is presented in ultra-thin gate oxide MOS devices that tunneling current changes with gate-oxide thickness. To analyze quantitatively the behaviors of scaled MOS devices in the effects of gate tunneling current and predict the trends, the characteristics of MOS devices are studied in detail using HSPICE simulator. The simulation results in BSIM4 model well agree with the model proposed. The theory and experiment data are contributed to the VLSI circuit design in the future.

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