Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

1991 ◽  
Vol 12 (3) ◽  
pp. 101-103 ◽  
Author(s):  
Qin-Yi Tong ◽  
Xiao-Li Xu ◽  
Hui-Zhen Zhang
Keyword(s):  
Fully Depleted ◽  
Buried Channel ◽  
Kink Effect ◽  
Bonding Technology

Moderate kink effect in fully depleted thin-film SOI MOSFETs

1995 ◽  
Vol 31 (4) ◽  
pp. 326-327 ◽  
Author(s):  
F. Balestra ◽  
T. Matsumoto ◽  
H. Nakabayashi ◽  
M. Koyanagi ◽  
M. Tsuno ◽  
...  
Keyword(s):  
Thin Film ◽  
Fully Depleted ◽  
Kink Effect

ON THE 1/f NOISE IN 0.15 μm FULLY DEPLETED SOI/MOS TRANSISTORS

2002 ◽  
Vol 02 (03) ◽  
pp. L253-L256 ◽  
Author(s):  
S. HAENDLER ◽  
J. JOMAAH ◽  
F. BALESTRA
Keyword(s):  
Low Frequency ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Mos Transistors ◽  
Fully Depleted ◽  
Kink Effect

The low frequency noise (LFN) behavior in 0.15 μm N-channel fully depleted SOI/MOS transistors is investigated, both in ohmic and saturation regimes. The extraction of the interface trap density is also carried out. Moreover, the existence of a moderate kink effect and its influence on LF noise in fully depleted devices are shown.

Anomalous Kink Effect in Low-Dimensional Gate-Recessed Fully Depleted SOI MOSFET at Low Temperature

NANO ◽  
2015 ◽  
Vol 10 (07) ◽  
pp. 1550093 ◽  
Author(s):  
Avi Karsenty ◽  
Avraham Chelly
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Fully Depleted ◽  
Kink Effect ◽  
Channel Thickness ◽  
Extension Zone ◽  
Nanoscale Mosfets ◽  
Output Characteristics ◽  
Recessed Channel ◽  
Low Dimensional

Nanoscale MOSFETs Gate-Recessed Channel (GRC) device with a silicon channel thickness (t SI ) as low as 2.2 nm was first tested at room temperature for functionality check, and then tested at low temperature (77 K) for I–V characterizations. In spite of its FD-SOI nanoscale thickness, the GRC device has surprisingly exhibited a Kink Effect in the output characteristics at 77 K. The anomalous Kink Effect can be explained by the increase of the lateral electric field in the drain junction with the channel extension zone when lowering the temperature.

Kink-like effect in long n-channel twin-gate fully-depleted SOI MOSFETs

1994 ◽  
Vol 30 (17) ◽  
pp. 1456-1458 ◽  
Author(s):  
D. De Ceuster ◽  
D. Flandre
Keyword(s):  
Fully Depleted
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