Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

1997 ◽  
Vol 18 (12) ◽  
pp. 577-579 ◽  
Author(s):  
K. Eriguchi ◽  
M. Niwa
Keyword(s):  
Gate Oxide ◽  
Electrical Stress ◽  
Lifetime Testing

Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

1999 ◽  
Vol 567 ◽  
Author(s):  
Michel Houssa ◽  
P.W. Mertens ◽  
M.M. Heyns
Keyword(s):  
Gate Voltage ◽  
Dielectric Breakdown ◽  
Percolation Cluster ◽  
Gate Oxide ◽  
Oxide Layers ◽  
Long Range Correlations ◽  
Electrical Stress ◽  
Non Gaussian ◽  
Thin Gate Oxide ◽  
Soft Breakdown

ABSTRACTThe time-dependent dielectric breakdown of MOS capacitors with ultra-thin gate oxide layers is investigated. After the occurrence of soft breakdown, the gate current increases by 3 to 4 orders of magnitudes and behaves like a power law of the applied gate voltage. It is shown that this behavior can be explained by assuming that a percolation path is formed between the electron traps generated in the gate oxide layer during electrical stress of the capacitors. The time dependence of the gate voltage signal after soft breakdown is next analysed. It is shown that the fluctuations in the gate voltage are non-gaussian as well as that long-range correlations exist in the system after soft breakdown. These results can be explained by a dynamic percolation model, taking into account the trapping-detrapping of charges within the percolation cluster formed at soft breakdown.

scholarly journals Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2081-2084 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
A. Mercha ◽  
K. Hayama ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Electrical Stress ◽  
Thin Gate Oxide

Performance of Poly-Si Tfts with Double Gate Oxide Layers

1996 ◽  
Vol 424 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Cheol-Min Park ◽  
Jae-Hong Jun ◽  
Byung-Sung Bae ◽  
Min-Koo Han
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Gate Insulator ◽  
Double Gate ◽  
Electrical Parameters ◽  
Electrical Field ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Electrical Stress ◽  
Low Threshold

AbstractWe have fabricated a poly-Si TFT with double gate insulator composed of ECR oxide and APCVD oxide to improved the performance of poly-Si TFTs. The poly-Si TFT with double gate oxide exhibits the remarkable enhancement of the electrical parameters compared with the conventional poly-Si TFTs which has APCVD gate oxide, such as improvement of the subthreshold swing and the low threshold voltage. The proposed poly-Si TFT has a higher oxide breakdown electrical field and the device characteristics are not degraded significantly after an electrical stress. It is found that the ECR oxide plays a key role to improve the device performances and prevent the poly-Si TFTs from degradation due to the electrical stress.

A New Method for Testing Electrolytic Capacitors to Compare Life Expectancy

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001759-001786 ◽  
Author(s):  
Stephani Gulbrandsen ◽  
Joelle Arnold ◽  
Nick Kirsch ◽  
Greg Caswell
Keyword(s):  
Life Expectancy ◽  
Historical Data ◽  
Series Resistance ◽  
Liquid Electrolyte ◽  
Time To Failure ◽  
Equivalent Series Resistance ◽  
Electrolytic Capacitors ◽  
Electrical Stress ◽  
Specialized Equipment ◽  
Lifetime Testing

Power system applications, such as street lighting, typically have a 10 year warranty. When these systems include electrolytic capacitors, it is important to choose a supplier that meets these requirements. Traditional lifetime testing of electrolytic capacitors to ascertain their life expectancy requires specialized equipment, is time consuming, labor intensive, and for most OEMs, is ultimately cost prohibitive. Electrolytic capacitors with the same capacitance and voltage ratings from different suppliers may be rated to the same lifetime, but historical data confirms that they can have significantly different operational expected lives. An accelerated testing methodology is needed to compare the reliability of electrolytic capacitors from different suppliers. DfR has developed an approach that reduces test times from thousands of hours to several weeks by taking advantage of two key behaviors of electrolytics. The first involves the rate at which capacitors lose electrolyte, which is fairly predictable at a given temperature and electrical stress. The second key behavior is the dependence of the equivalent series resistance (ESR) of electrolytic capacitors on the volume of liquid electrolyte. The approach that will be described in this paper will demonstrate a means of comparing the time to failure for comparable capacitors from different suppliers under the same conditions. Case studies will demonstrate how this method avoids the extended testing that is typically required.

scholarly journals The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

2013 ◽  
Vol 28 (4) ◽  
pp. 406-414 ◽  
Author(s):  
Snezana Djoric-Veljkovic ◽  
Ivica Manic ◽  
Vojkan Davidovic ◽  
Danijel Dankovic ◽  
Snezana Golubovic ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Gate Oxide ◽  
Transfer Characteristic ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Stress ◽  
Interface Defects ◽  
Recovery Annealing ◽  
Stress Influences ◽  
Stress Influence

The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing) of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface.

The Poly-Si Tfts Fabricated by Novel Oxidation Method with Intermediate Oxide

1996 ◽  
Vol 424 ◽  
Author(s):  
C-M Park ◽  
J-S Yoo ◽  
B-H Min ◽  
M-K Han
Keyword(s):  
Surface Roughness ◽  
Oxide Layer ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Dielectric Strength ◽  
Device Performance ◽  
Electrical Parameters ◽  
Oxidation Method ◽  
Electrical Stress ◽  
Intermediate Oxide

AbstractWe have fabricated a poly-Si TFT using a novel oxidation method, which improves the surface roughness at the interface between the poly-Si layer and the gate oxide layer. Compared with the poly-Si TFTs fabricated by the conventional oxidation method, the proposed poly-Si TFT exhibits the remarkable enhancement of the electrical parameters, such as the subthreshold swing and the threshold voltage. It is observed that the proposed poly-Si TFT has a higher dielectric strength and the device characteristics are not degraded significantly after an electrical stress. The improvement of the surface roughness at oxide/poly-Si interface is found to be critical to enhance the device performance.

Gate oxide degradation assessment by electrical stress and capacitance measurements

2018 ◽  
Author(s):  
Dann Morillon ◽  
Pascal Masson ◽  
Franck Julien ◽  
Philippe Lorenzini ◽  
Jerome Goy ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Capacitance Measurements ◽  
Electrical Stress ◽  
Oxide Degradation

Transistor Level Reliability Assessment of Gate Oxide Defects by BTI Stress Nanoprobing

2019 ◽  
Author(s):  
Dave Albert ◽  
Zhigang Song ◽  
Mike Tenney ◽  
Pat McGinnis ◽  
Johns Oarethu
Keyword(s):  
Failure Analysis ◽  
Stress Test ◽  
Gate Oxide ◽  
Product Yield ◽  
Silicon On Insulator ◽  
Electrical Failure ◽  
Bias Temperature Instability ◽  
Electrical Stress ◽  
And Performance ◽  
The Impact

Abstract This paper presents Electrical Failure Analysis (EFA) and Physical Failure Analysis (PFA) on a random time zero (t0) gate oxide defect within an IBM processor manufactured with a 14nm SOI (Silicon On Insulator) FinFET technology. The natures of the Functional Fail, the gate oxide defect, and the transistor characteristics are included. The impact of this gate oxide defect to product yield and performance, plus the extent to which it extends across the product chip, which includes passing circuits, is covered. Since chips, which may contain this defect, could be present within the entire product lifecycle, the reliability aspects of the defect at the transistor level were investigated. Among the various reliability stresses available for transistors, Constant Voltage Stress (CVS) Bias Temperature Instability (BTI) was chosen. CVS BTI stressing was able to be performed on both the NFETs and PFETs within the Inverter of the failing circuit, plus other identical reference circuits. The BTI stress nanoprobing is covered. This includes an overview of BTI stressing, confirming the nanoprobing system and electrical stress/test programs are adequate for BTI stressing, BTI stress methodologies for Inverters, plus the BTI stress results. The transistor level BTI stress results are discussed and compared to other published BTI literature. Finally, the reliability aspects of this gate oxide defect are discussed.

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