A simple technique to determine barrier height change in gate oxide caused by electrical stress

2002 ◽  
Vol 49 (8) ◽  
pp. 1493-1496 ◽  
Author(s):  
T.P. Chen
Keyword(s):  
Barrier Height ◽  
Simple Technique ◽  
Gate Oxide ◽  
Electrical Stress ◽  
Height Change

Influences of Nitridation on Barrier Height Change Caused by Electrical Stress

2002 ◽  
Vol 41 (Part 2, No. 12B) ◽  
pp. L1425-L1427
Author(s):  
Shyue Seng Tan ◽  
Tu Pei Chen ◽  
Chew Hoe Ang
Keyword(s):  
Barrier Height ◽  
Electrical Stress ◽  
Height Change

Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

1999 ◽  
Vol 567 ◽  
Author(s):  
Michel Houssa ◽  
P.W. Mertens ◽  
M.M. Heyns
Keyword(s):  
Gate Voltage ◽  
Dielectric Breakdown ◽  
Percolation Cluster ◽  
Gate Oxide ◽  
Oxide Layers ◽  
Long Range Correlations ◽  
Electrical Stress ◽  
Non Gaussian ◽  
Thin Gate Oxide ◽  
Soft Breakdown

ABSTRACTThe time-dependent dielectric breakdown of MOS capacitors with ultra-thin gate oxide layers is investigated. After the occurrence of soft breakdown, the gate current increases by 3 to 4 orders of magnitudes and behaves like a power law of the applied gate voltage. It is shown that this behavior can be explained by assuming that a percolation path is formed between the electron traps generated in the gate oxide layer during electrical stress of the capacitors. The time dependence of the gate voltage signal after soft breakdown is next analysed. It is shown that the fluctuations in the gate voltage are non-gaussian as well as that long-range correlations exist in the system after soft breakdown. These results can be explained by a dynamic percolation model, taking into account the trapping-detrapping of charges within the percolation cluster formed at soft breakdown.

scholarly journals Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2081-2084 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
A. Mercha ◽  
K. Hayama ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Electrical Stress ◽  
Thin Gate Oxide

Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)

2017 ◽  
Vol 20 (1) ◽  
Author(s):  
Li Liu ◽  
Yin-Tang Yang
Keyword(s):  
Barrier Height ◽  
Conduction Mechanism ◽  
Gate Oxide ◽  
Annealed Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Electrical Fields ◽  
Conduction Mechanisms ◽  
Current Conduction

AbstractCurrent conduction mechanisms of SiC metal-oxide-semiconductor (MOS) capacitors on n-type 4H-SiC with or without NO annealing have been investigated in this work. It has been revealed that Fowler-Nordheim (FN) tunneling is the dominating current conduction mechanism in high electrical fields, with barrier height of 2.67 and 2.54 eV respectively for samples with NO and without NO annealing. A higher barrier height for NO-annealed sample indicates the effect of N element on the SiC/SiO

Electron barrier height change and its influence on EEPROM cells

1992 ◽  
Vol 13 (5) ◽  
pp. 244-246 ◽  
Author(s):  
R.B. Sethi ◽  
U.S. Kim ◽  
I. Johnson ◽  
P. Cacharelis ◽  
M. Manley
Keyword(s):  
Barrier Height ◽  
Height Change
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