A new DC Drain-Current-Conductance method (DCCM) for the characterization of effective mobility (μ/sub eff/) and series resistances (R/sub s/, R/sub d/) of fresh and hot-carrier stressed graded junction MOSFETs

1997 ◽  
Vol 18 (7) ◽  
pp. 327-329 ◽  
Author(s):  
C.L. Lou ◽  
W.K. Chim ◽  
D.S.H. Chan ◽  
Y. Pan
Keyword(s):  
Drain Current ◽  
Hot Carrier ◽  
Conductance Method ◽  
Effective Mobility ◽  
Current Conductance ◽  
Graded Junction

An improved drain-current-conductance method with substrate back-biasing

1999 ◽  
Vol 46 (2) ◽  
pp. 431-433 ◽  
Author(s):  
C.B. Tan ◽  
W.K. Chim ◽  
D.S.H. Chan ◽  
C.L. Lou
Keyword(s):  
Drain Current ◽  
Conductance Method ◽  
Current Conductance

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions

2017 ◽  
Vol 17 (1) ◽  
pp. 94-100
Author(s):  
In Eui Lim ◽  
Heesauk Jhon ◽  
Gyuhan Yoon ◽  
Woo Young Choi
Keyword(s):  
Drain Current ◽  
Hot Carrier ◽  
Hot Carrier Stress

New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's

2000 ◽  
Author(s):  
S. J. Chen ◽  
H. L. Kao ◽  
Steve S. Chung ◽  
C. C. Chen ◽  
C. Y. Chang ◽  
...  
Keyword(s):  
Deep Submicron ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Hot Carrier Effect

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

2009 ◽  
Vol 49 (8) ◽  
pp. 892-896 ◽  
Author(s):  
Zhen-Ying Hsieh ◽  
Mu-Chun Wang ◽  
Chih Chen ◽  
Jia-Min Shieh ◽  
Yu-Ting Lin ◽  
...  
Keyword(s):  
Drain Current ◽  
Hot Carrier ◽  
Hot Carrier Stress
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