2017 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

229

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781538635599

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268459 ◽

2017 ◽

Cited By ~ 1

Author(s):

Thanh Viet Dinh ◽

Jan Sonsky ◽

Jan Claes ◽

Oliver Dieball ◽

Guido T. Sasse ◽

...

Keyword(s):

Cmos Technology

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A single magnetic-tunnel-junction stochastic computing unit

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268504 ◽

2017 ◽

Cited By ~ 7

Author(s):

Yang Lv ◽

Jian-Ping Wang

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Stochastic Computing ◽

Computing Unit

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Industrialised SPAD in 40 nm technology

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268404 ◽

2017 ◽

Cited By ~ 9

Author(s):

S. Pellegrini ◽

B. Rae ◽

A. Pingault ◽

D. Golanski ◽

S. Jouan ◽

...

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Variability-and reliability-aware design for 16/14nm and beyond technology

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268378 ◽

2017 ◽

Cited By ~ 6

Author(s):

R. Huang ◽

X. B. Jiang ◽

S. F. Guo ◽

P. P. Ren ◽

P. Hao ◽

...

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Continuing Moore's law with EUV lithography

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268390 ◽

2017 ◽

Cited By ~ 4

Author(s):

B. Turkot ◽

S. Carson ◽

A. Lio

Keyword(s):

Moore’S Law ◽

Moore's Law ◽

Euv Lithography

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20 Years of Cu BEOL in manufacturing, and its future prospects

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268387 ◽

2017 ◽

Author(s):

Daniel C. Edelstein

Keyword(s):

Future Prospects

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Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268397 ◽

2017 ◽

Cited By ~ 13

Author(s):

Jiuren Zhou ◽

Jibao Wu ◽

Genquan Han ◽

Ruoying Kanyang ◽

Yue Peng ◽

...

Keyword(s):

Frequency Dependence ◽

Negative Capacitance

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New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268344 ◽

2017 ◽

Cited By ~ 13

Author(s):

Zhuoqing Yu ◽

Jiayang Zhang ◽

Runsheng Wang ◽

Shaofeng Guo ◽

Changze Liu ◽

...

Keyword(s):

Compact Model ◽

Circuit Reliability ◽

Hot Carrier ◽

Hot Carrier Degradation

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A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268454 ◽

2017 ◽

Cited By ~ 7

Author(s):

F. Eltes ◽

M. Kroh ◽

D. Caimi ◽

C. Mai ◽

Y. Popoff ◽

...

Keyword(s):

Electro Optic

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Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268411 ◽

2017 ◽

Cited By ~ 5

Author(s):

Alon Vardi ◽

Lisa Kong ◽

Wenjie Lu ◽

Xiaowei Cai ◽

Xin Zhao ◽

...

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2017 IEEE International Electron Devices Meeting (IEDM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology

A single magnetic-tunnel-junction stochastic computing unit

Industrialised SPAD in 40 nm technology

Variability-and reliability-aware design for 16/14nm and beyond technology

Continuing Moore's law with EUV lithography

20 Years of Cu BEOL in manufacturing, and its future prospects

Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation

2017 IEEE International Electron Devices Meeting (IEDM)
Latest Publications