An improved drain-current-conductance method with substrate back-biasing

1999 ◽  
Vol 46 (2) ◽  
pp. 431-433 ◽  
Author(s):  
C.B. Tan ◽  
W.K. Chim ◽  
D.S.H. Chan ◽  
C.L. Lou
Keyword(s):  
Drain Current ◽  
Conductance Method ◽  
Current Conductance

A MODIFICATION OF THE DIRECT CURRENT CONDUCTANCE METHOD

1958 ◽  
Vol 36 (2) ◽  
pp. 315-320 ◽  
Author(s):  
G. D. Graham ◽  
O. Maass
Keyword(s):  
Hydrogen Peroxide ◽  
Direct Current ◽  
Current Method ◽  
Alternating Current ◽  
Aqua Regia ◽  
Conductance Method ◽  
Current Conductance

A modification in the employment of the direct current method of measuring conductivities is described. The main objective is that pure metallic probe and current carrying electrodes can be used, thus making it possible to investigate the conductivity of solutions such as hydrogen peroxide, aqua regia, etc. This necessitates a choice of electrodes which are inert to such solutions. An electrometer having an infinite resistance so as to avoid any polarization at the probes, in this case the quadrant electrometer, is described in its use as a null instrument. An accuracy as high as or greater than that of the alternating current method could be obtained. Furthermore, this method entails greater equipment economy and simplicity in apparatus required.

ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-223-C4-226 ◽  
Author(s):  
G. POST ◽  
P. DIMITRIOU ◽  
A. FALCOU ◽  
N. DUHAMEL ◽  
G. MERMANT
Keyword(s):  
Drain Current ◽  
Current Drift ◽  
Ion Implanted

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Mechanism of drain current droop in GaAs MESFETs

1995 ◽  
Vol 31 (21) ◽  
pp. 1875-1876 ◽  
Author(s):  
P.H. Ladbrooke ◽  
A.K. Jastrzebski ◽  
J.P. Bridge ◽  
R.J. Donarski ◽  
J.E. Barnaby
Keyword(s):  
Drain Current
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