Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation

1996 ◽  
Vol 17 (11) ◽  
pp. 518-520 ◽  
Author(s):  
A.B.Y. Chan ◽  
C.T. Nguyen ◽  
P.K. Ko ◽  
Man Wong ◽  
A. Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Thin Film Transistor ◽  
Mechanical Polishing

Investigation of the Role of Chemical-Mechanical Polishing in Improving the Performance of Polysilicon TFTs

1999 ◽  
Vol 558 ◽  
Author(s):  
B. Lee ◽  
L.J. Quinn ◽  
P.T. Baine ◽  
S.J.N. Mitchell ◽  
B.M. Armstrong ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Carrier Transport ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Mechanical Polishing ◽  
Initial Surface ◽  
Silicon Thin Film ◽  
Glass Substrates

ABSTRACTPolycrystalline silicon thin-film transistors (TFTs) have been fabricated on glass substrates using a low temperature top-gate self-aligned process. The interface between the polysilicon active layer and the silicon dioxide oxide gate dielectric is of vital importance in order to achieve good thin-film transistor electrical characteristics. Carrier transport takes place within 10nm of this interface, and any roughness in this region, corresponding to the initial surface roughness of the polysilicon layer, causes scattering of the carriers and a higher density of interface traps. Chemical-mechanical polishing has been used to reduce the initial surface roughness of the polysilicon. Electrical parameters of polished TFTs, such as mobility and threshold voltage, show a marked improvement compared to unpolished devices.

Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

2001 ◽  
Vol 685 ◽  
Author(s):  
Barry D. van Dijk ◽  
Paul Ch. Van der Wilt ◽  
G. J. Bertens ◽  
Lis.K. Nanver ◽  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Filter Method ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

scholarly journals Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2554
Author(s):  
Wenping Geng ◽  
Xiangyu Yang ◽  
Gang Xue ◽  
Wenhao Xu ◽  
Kaixi Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Adhesive Bonding ◽  
Mechanical Polishing ◽  
Bonding Interface ◽  
Infrared Analysis ◽  
Mems Devices ◽  
Wafer Level ◽  
Integration Technology

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

The Effect of Microstructure on Chemical Mechanical Polishing Process of Thin-Film Metals

2007 ◽  
Author(s):  
Joseph Bonivel ◽  
Sarah Biltz ◽  
Elon Terrell ◽  
Burak Ozdoganlar ◽  
C. Fred Higgs
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Data Storage ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Metal Thin Films ◽  
Storage Devices ◽  
Multi Scale ◽  
Chemical Mechanical Polishing Process

Chemical mechanical polishing (CMP) is a critical nanomanufacturing process used to remove or planarize ultrathin metallic, dielectric, or barrier layers on silicon wafers. The CMP process is a vital interim fabrication step for integrated circuits and data storage devices. One of the major shortcomings of existing CMP models is that they do not account for crystallographic effects of the thin film metal materials when predicting material removal rates. This work investigates the effect of the microstructure on the CMP of copper and metal thin films on silicon wafer. Nanoindentation tests were conducted to measure the hardness variations across a wafer surface due to the crystallography of the metal films. Spatial variation of mechanical properties was also input into an existing multi-scale CMP model. Nano-characterization and CMP experimental results are presented and compared to an existing CMP wear model.

Sign in / Sign up

Export Citation Format

Share Document