Application of chemical-mechanical polishing to thin-film transistors for advanced displays

1996 ◽  
Author(s):  
Alice Bing Yuen Chan
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Thin Film Transistors ◽  
Mechanical Polishing

scholarly journals Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2554
Author(s):  
Wenping Geng ◽  
Xiangyu Yang ◽  
Gang Xue ◽  
Wenhao Xu ◽  
Kaixi Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Adhesive Bonding ◽  
Mechanical Polishing ◽  
Bonding Interface ◽  
Infrared Analysis ◽  
Mems Devices ◽  
Wafer Level ◽  
Integration Technology

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

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