A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)

1989 ◽  
Vol 10 (10) ◽  
pp. 452-454 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
M. Aoki ◽  
K. Shimohigashi
Keyword(s):  
Low Temperature ◽  
Contact Structure ◽  
Current Gain ◽  
High Current ◽  
Base Contact

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

2013 ◽  
Vol 740-742 ◽  
pp. 974-977 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Contact Area ◽  
Electric Field Distribution ◽  
Current Gain ◽  
High Current ◽  
High Breakdown Voltage ◽  
Base Contact

Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs

2008 ◽  
Vol 600-603 ◽  
pp. 1163-1166 ◽  
Author(s):  
Chih Fang Huang ◽  
Chien Yuen Tseng
Keyword(s):  
Thermal Effects ◽  
Current Gain ◽  
High Current ◽  
Spice Model ◽  
Uniform Current ◽  
Current Densities ◽  
Gain Reduction ◽  
High Level ◽  
Base Contact ◽  
Good Agreement

This paper presents a simulation study on the thermal effects in 4H-SiC NPN BJTs. Simulation results show several important effects on the BJT characteristics such as base contact locations, current gain reduction due to high level injection in the base at high current densities, and the non-uniform current distribution due to long fingers and poor contact resistance. A DC spice model with temperature effects is created. The IVs of the model are in good agreement with measurement.

scholarly journals Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

Sensors ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 74 ◽  
Author(s):  
Sang-Won Lee ◽  
Seung-Hwan Cha ◽  
Kyung-Jae Choi ◽  
Byoung-Ho Kang ◽  
Jae-Sung Lee ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Dark Current ◽  
Current Gain ◽  
High Current ◽  
Uv Photodetector
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