Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors

2000 ◽  
Vol 47 (2) ◽  
pp. 274-281 ◽  
Author(s):  
N. Bovolon ◽  
R. Schultheis ◽  
J.-E. Muller ◽  
P. Zwicknagl
Keyword(s):  
Low Temperature ◽  
Current Density ◽  
Heterojunction Bipolar Transistors ◽  
High Current Density ◽  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Short Term ◽  
Gain Variation ◽  
Dc Current

A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors

1998 ◽  
Vol 19 (12) ◽  
pp. 469-471 ◽  
Author(s):  
N. Bovolon ◽  
R. Schultheis ◽  
J.-E. Muller ◽  
P. Zwicknagl ◽  
E. Zanoni
Keyword(s):  
Current Density ◽  
Heterojunction Bipolar Transistors ◽  
High Current Density ◽  
Bipolar Transistors ◽  
High Current ◽  
Short Term

scholarly journals Power lateral pnp transistor operating with high current density in irradiated voltage regulator

2013 ◽  
Vol 28 (2) ◽  
pp. 146-157 ◽  
Author(s):  
Vladimir Vukic ◽  
Predrag Osmokrovic
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Positive Influence ◽  
Radiation Hardness ◽  
Current Gain ◽  
Voltage Regulator ◽  
Interface Traps ◽  
High Current ◽  
Oxide Trapped Charge ◽  
Trapped Charge

The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

Low Temperature Thin-film Silicon Diodes for Consumer Electronics

2005 ◽  
Vol 862 ◽  
Author(s):  
Qi Wang ◽  
Scott Ward ◽  
Anna Duda ◽  
Jian Hua ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
Consumer Electronics ◽  
High Current ◽  
Plastic Substrates ◽  
Forward Current ◽  
Thin Film Silicon

AbstractWe have developed high current density thin-film silicon n-i-p diodes for low cost and low temperature two-dimensional diode-logic memory array applications. The diodes are fabricated at temperatures below 250°C on glass, stainless steel, and plastic substrates using hot-wire chemical vapor deposition (CVD). The 0.01-mm2 standalone diodes have a forward current-density (J) of near 10 kA/cm2 and a rectification ratio over 107 at ±2 V. The 25 μm2 array diodes have J > 104 A/cm2 and rectification of 105 at ±2V. On plastic substrates, we have also used plasma-enhanced CVD to deposit 10-μm diameter diodes with J ˜ 5 x 104 A/cm2. We found that the use of microcrystalline silicon (μc-Si) i- and nlayers results in higher current-density diodes than with amorphous silicon. Reducing the diode area increases the forward current density by lowering the voltage drop across the external series resistances. A prototype diode array memory based on 10-micron devices was successfully demonstrated by monolithically integrating diodes with a-Si:H switching elements. High current density diodes have potential applications in a variety of large area, thin-film electronic devices, in addition to a-Si:H-based memory. This could widen the application of thin-film silicon beyond its present industrial applications in thin-film transistors, solar cells, bolometers and photo-detectors.

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