scholarly journals Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

Sensors ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 74 ◽  
Author(s):  
Sang-Won Lee ◽  
Seung-Hwan Cha ◽  
Kyung-Jae Choi ◽  
Byoung-Ho Kang ◽  
Jae-Sung Lee ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Dark Current ◽  
Current Gain ◽  
High Current ◽  
Uv Photodetector

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 524-526 ◽  
Author(s):  
R.N. Nottenburg ◽  
Y.-K. Chen ◽  
M.B. Panish ◽  
R. Hamm ◽  
D.A. Humphrey
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

On-site evolution of ultrafine ZnO nanoparticles from hollow metal–organic frameworks for advanced lithium ion battery anodes

2017 ◽  
Vol 5 (43) ◽  
pp. 22512-22518 ◽  
Author(s):  
Yiqiong Zhang ◽  
Yanbing Lu ◽  
Shi Feng ◽  
Dongdong Liu ◽  
Zhaoling Ma ◽  
...  
Keyword(s):  
Current Density ◽  
Zno Nanoparticles ◽  
High Current Density ◽  
Metal Organic Frameworks ◽  
Lithium Ion ◽  
Reversible Capacity ◽  
Cycling Performance ◽  
High Current ◽  
Metal Organic ◽  
Hollow Metal

With unique hollow frameworks decorated with well-dispersed ultrafine ZnO nanoparticles, the h-ZIF-8@ZnO hybrids exhibit good cycling performance with a reversible capacity of ∼637.9 mA h g−1 at a high current density of 1.0 A g−1 after 500 cycles.

Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

2019 ◽  
Vol 36 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Chee Yong Fong ◽  
Sha Shiong Ng ◽  
NurFahana Mohd Amin ◽  
Fong Kwong Yam ◽  
Zainuriah Hassan
Keyword(s):  
Thin Films ◽  
Dark Current ◽  
Uv Light ◽  
Low Cost ◽  
Sol Gel ◽  
Contrast Ratio ◽  
Uv Photodetector ◽  
Content Type ◽  
Barrier Heights ◽  
Coating Method

Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

scholarly journals Power lateral pnp transistor operating with high current density in irradiated voltage regulator

2013 ◽  
Vol 28 (2) ◽  
pp. 146-157 ◽  
Author(s):  
Vladimir Vukic ◽  
Predrag Osmokrovic
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Positive Influence ◽  
Radiation Hardness ◽  
Current Gain ◽  
Voltage Regulator ◽  
Interface Traps ◽  
High Current ◽  
Oxide Trapped Charge ◽  
Trapped Charge

The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

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