High Aspect Ratio, Vertical Bipolar Junction Transistor NPN Device Fault Isolation & Analysis Techniques

Analog components are still an important aspect of our society's electronic portfolio. They play a role in the emerging and expanding 5G electronic industry, for instance. The NPN bipolar junction transistor (BJT) is the foundation of many analog circuits and has continually evolved to meet more demanding specifications [1], [2]. Certain embodiments of these NPNs pose difficulties in failure analysis. One such embodiment is a vertical NPN BJT with high aspect ratio dimensions. Specifically, the dimensions involved are nanometer thick NP & PN junctions that extend microns in length. These dimensions provide desired performance improvements but a subtle, nanometer scale defect present anywhere along this length can cause substantial electrical shifts detrimental to an analog circuit. Several simple and complex techniques using common failure analysis tools can isolate these defects as discussed in this paper.

Cross-platform Simulation of Bipolar Junction Transistor Electrical Principle

This paper designs a set of simulation method about bipolar junction transistor (short for ‘BJT’) electrical principle, which can be used as the foundation of cross-platform simulation of semiconductor electronic technology. Firstly, a mathematical model is established to simulate the amplification effect of bipolar junction transistor current control, the influence of Base current and Collector-Emitter Voltage on the working area of bipolar junction transistor. Secondly, interactive multimedia such as graphics, images and animation are used for simulation presentation through cross-platform software design method which is the mainstream internet web page interaction technology. Finally, a logic structure of the whole simulation software is designed, which presents data transmission, control workflow, relationship between each class and each layer in the simulation software.

Discussion and Improvement on the Calculation of the Relationship between the Base Emitter of the Bipolar Junction Transistor and the Temperature by Using MATLAB Software

The purpose of this article is to explore and improve the effect of Bipolar Junction Transistor amplifier base-emitter on temperature changes. The prelude starts with Shockley's theory and its formula calculation. Research motivation, literature data and book principles cooperate with MATLAB application software skills to develop programs; it is used to calculate the relationship between various component parameters and temperature changes. The artificial calculation steps are too cumbersome and prone to clerical errors. Therefore, the program approach has been developed with report-style calculation results with both text and pictures. The feature of computer program calculation is the ability to compare and analyze the results produced at different temperatures, rapidly and repeatedly. The lack of known Bipolar Junction Transistors is replaced by Field Effect Transistors that are not affected by temperature. If the Bipolar Junction Transistor is used as the basis for the design, temperature changes must be considered to ensure the design quality. The purpose of this article is to introduce that the process of calculation has made the shift from an artificial-based way to a computer-based one.