A high-current-gain low-temperature pseudo-heterojunction bipolar transistor utilizing sidewall base-contact structure (SICOS)

1991 ◽  
Vol 38 (3) ◽  
pp. 555-565 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
T. Onai ◽  
M. Aoki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Contact Structure ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Base Contact

A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)

1989 ◽  
Vol 10 (10) ◽  
pp. 452-454 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
M. Aoki ◽  
K. Shimohigashi
Keyword(s):  
Low Temperature ◽  
Contact Structure ◽  
Current Gain ◽  
High Current ◽  
Base Contact

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

2008 ◽  
Vol 47-50 ◽  
pp. 383-386
Author(s):  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Wen Shiung Lour ◽  
Chien Ming Li ◽  
Yi Zhen Wu ◽  
...  
Keyword(s):  
Valence Band ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Potential Spike ◽  
Emitter Junction ◽  
Valence Band Discontinuity

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

2021 ◽  
pp. 2106537
Author(s):  
Sanjun Yang ◽  
Lejing Pi ◽  
Liang Li ◽  
Kailang Liu ◽  
Ke Pei ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction

Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor

1990 ◽  
Vol 26 (6) ◽  
pp. 392 ◽  
Author(s):  
T. Ohishi ◽  
Y. Abe ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
T. Matsui
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current

InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity

2018 ◽  
Vol 10 (5) ◽  
pp. 651-654
Author(s):  
Yi-Chen Wu ◽  
Jung-Hui Tsai ◽  
Syuan-Hao Liou ◽  
Pao-Sheng Lin ◽  
Yu-Chi Chen ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current
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