Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study

1996 ◽  
Vol 43 (6) ◽  
pp. 2547-2557 ◽  
Author(s):  
J.L. Autran ◽  
C. Chabrerie ◽  
P. Paillet ◽  
O. Flament ◽  
J.L. Leray ◽  
...  
Keyword(s):  
Interface Traps ◽  
Mos Transistors ◽  
Charge Pumping ◽  
Radiation Induced

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1063-1066 ◽  
Author(s):  
Ayayi Claude Ahyi ◽  
S.R. Wang ◽  
John R. Williams
Keyword(s):  
Field Effect ◽  
Gamma Dose ◽  
Interface Traps ◽  
Valence Band Edge ◽  
Field Effect Mobility ◽  
Irradiation Effects ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Radiation Induced ◽  
Radiation Tolerant

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

1991 ◽  
Vol 38 (8) ◽  
pp. 1820-1831 ◽  
Author(s):  
G. Van den bosch ◽  
G.V. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Charge Pumping
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