In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique

1997 ◽  
Vol 44 (12) ◽  
pp. 2262-2266 ◽  
Author(s):  
D. Bauza ◽  
Y. Maneglia
Keyword(s):  
Interface Traps ◽  
Mos Transistors ◽  
Charge Pumping

Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study

1996 ◽  
Vol 43 (6) ◽  
pp. 2547-2557 ◽  
Author(s):  
J.L. Autran ◽  
C. Chabrerie ◽  
P. Paillet ◽  
O. Flament ◽  
J.L. Leray ◽  
...  
Keyword(s):  
Interface Traps ◽  
Mos Transistors ◽  
Charge Pumping ◽  
Radiation Induced

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

1991 ◽  
Vol 38 (8) ◽  
pp. 1820-1831 ◽  
Author(s):  
G. Van den bosch ◽  
G.V. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Charge Pumping
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