Freeze-out characterization of radiation hardened N/sup +/ polysilicon gate CMOS transistors

D.C. Pantelakis; D.F. Hemmenway; N.W. van Vonno; T.J. Sanders

doi:10.1109/23.124107

Freeze-out characterization of radiation hardened N/sup +/ polysilicon gate CMOS transistors

IEEE Transactions on Nuclear Science ◽

10.1109/23.124107 ◽

1991 ◽

Vol 38 (6) ◽

pp. 1289-1296 ◽

Cited By ~ 7

Author(s):

D.C. Pantelakis ◽

D.F. Hemmenway ◽

N.W. van Vonno ◽

T.J. Sanders

Keyword(s):

Cmos Transistors ◽

Polysilicon Gate ◽

Radiation Hardened ◽

Freeze Out

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An Automated Setup for the Characterization of Time-Based Degradation Effects Including the Process Variability in 40 nm CMOS Transistors

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/tim.2021.3090175 ◽

2021 ◽

pp. 1-1

Author(s):

Xhesila Xhafa ◽

Ali Dogus Gungordu ◽

Didem Erol ◽

Yavuzhan Yavuz ◽

Mustafa Berke Yelten

Keyword(s):

Process Variability ◽

Cmos Transistors

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Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.777153 ◽

1999 ◽

Vol 46 (8) ◽

pp. 1650-1655 ◽

Cited By ~ 36

Author(s):

K. Ahmed ◽

E. Ibok ◽

G.C.-F. Yeap ◽

Qi Xiang ◽

B. Ogle ◽

...

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Layer Charge ◽

Channel Resistance ◽

Polysilicon Gate

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Electrical characterization of CMOS transistors subject to externally applied mechanical stress

Computational Materials Science ◽

10.1016/j.commatsci.2008.02.024 ◽

2008 ◽

Vol 43 (4) ◽

pp. 951-956 ◽

Cited By ~ 4

Author(s):

D. Cordano ◽

G. Carnevale ◽

M. Bocciarelli

Keyword(s):

Mechanical Stress ◽

Electrical Characterization ◽

Cmos Transistors

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Characterization of radiation hardened fibers in a research grade nuclear reactor

Micro-structured and Specialty Optical Fibres VII ◽

10.1117/12.2592525 ◽

2021 ◽

Author(s):

Garry Berkovic ◽

Shlomi Zilberman ◽

Ehud Shafir ◽

Yosef London ◽

M. Dadon ◽

...

Keyword(s):

Nuclear Reactor ◽

Radiation Hardened ◽

Research Grade

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Strain Characterization of Advanced CMOS Transistors: An Industry Perspective

Microscopy and Microanalysis ◽

10.1017/s1431927618005366 ◽

2018 ◽

Vol 24 (S1) ◽

pp. 974-975

Author(s):

Jiong Zhang ◽

Xiaojun Weng ◽

Renliang Yuan ◽

Ling Pan ◽

Han Li ◽

...

Keyword(s):

Strain Characterization ◽

Cmos Transistors

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Characterization of new radiation hardened bipolar operational amplifiers

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994727 ◽

2009 ◽

Author(s):

Geraldine Chaumont ◽

Benoit Cornanguer ◽

Patrick Briand ◽

Christophe Prugne ◽

Florence Malou

Keyword(s):

Operational Amplifiers ◽

Radiation Hardened

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Yield characterization of high-current ion implantation particles on 65 nm CMOS transistors

2007 International Symposium on Semiconductor Manufacturing ◽

10.1109/issm.2007.4446889 ◽

2007 ◽

Author(s):

Brian Whitson ◽

Aaron Vanderpool

Keyword(s):

Ion Implantation ◽

High Current ◽

Cmos Transistors

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Prototyping and characterization of radiation hardened SiC MOS structures

2019 European Space Power Conference (ESPC) ◽

10.1109/espc.2019.8931985 ◽

2019 ◽

Author(s):

Francesco Pintacuda ◽

Vincenzo Cantarella ◽

Michele Muschitiello ◽

Silvia Massetti

Keyword(s):

Radiation Hardened ◽

Mos Structures

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Noise measurements on radiation-hardened CMOS transistors

Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference ◽

10.1109/nssmic.1991.259168 ◽

2002 ◽

Cited By ~ 5

Author(s):

W. Dabrowski ◽

M. Kajetanowicz ◽

D. Kidwell ◽

W.A. Rowe ◽

H.F.-W. Sadrozinski ◽

...

Keyword(s):

Cmos Transistors ◽

Noise Measurements ◽

Radiation Hardened

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The development of test structures for characterization of the fabrication and performance of radiation-hardened CCD images

10.6028/nbs.ir.79-1744 ◽

1979 ◽

Author(s):

G P Carver ◽

M G Buehler

Keyword(s):

Radiation Hardened ◽

And Performance

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